All MOSFET. STL66DN3LLH5 Datasheet

 

STL66DN3LLH5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STL66DN3LLH5
   Marking Code: 66DN3LLH5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 4.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: POWERFLAT5X6

 STL66DN3LLH5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STL66DN3LLH5 Datasheet (PDF)

 ..1. Size:611K  st
 stl66dn3llh5.pdf

STL66DN3LLH5 STL66DN3LLH5

STL66DN3LLH5Dual N-channel 30 V, 5.9 m, 20 A STripFET V Power MOSFETin PowerFLAT 5x6 double island packageDatasheet production dataFeaturesRDS(on) Type VDSS IDmaxSTL66DN3LLH5 30 V

 9.1. Size:711K  st
 stl66n3llh5.pdf

STL66DN3LLH5 STL66DN3LLH5

STL66N3LLH5N-channel 30 V, 0.0048 , 21 A PowerFLAT 5x6STripFET V Power MOSFETFeaturesRDS(on) Order code VDSS IDmaxSTL66N3LLH5 30 V

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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