STL6NM60N Datasheet. Specs and Replacement

Type Designator: STL6NM60N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.92 Ohm

Package: POWERFLAT5X5

STL6NM60N substitution

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STL6NM60N datasheet

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 stl6nm60n.pdf pdf_icon

STL6NM60N

STL6NM60N N-channel 600 V - 0.85 - 5.75 A - PowerFLAT (5x5) ultra low gate charge MDmesh II Power MOSFET Features VDSS @ RDS(on) Type ID TJMAX Max STL6NM60N 650 V ... See More ⇒

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STL6NM60N

STL6N2VH5 N-channel 20 V, 0.025 typ., 6 A STripFET V Power MOSFET in a PowerFLAT 2x2 package Datasheet production data Features Order code VDS RDS(on) max. ID PTOT 1 2 0.03 (VGS=4.5 V) 3 STL6N2VH5 20 V 6 A 2.4 W 0.04 (VGS=2.5 V) 6 Very low switching gate charge 1 5 2 Very low thermal resistance 4 3 Conduction losses reduced PowerFLAT 2x2... See More ⇒

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STL6NM60N

STL6N3LLH6 N-channel 30 V, 0.021 typ., 6 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 2x2 package Datasheet preliminary data Features Order code VDSS RDS(on) max. ID PTOT 1 2 0.025 (VGS=10 V) 3 STL6N3LLH6 30 V 6 A 2.4W 0.04 (VGS=4.5 V) RDS(on) * Qg industry benchmark 6 1 5 2 Extremely low on-resistance RDS(on) 4 3 High avalanche rugge... See More ⇒

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STL6NM60N

STL6NK55Z N-CHANNEL 550V - 1.2 - 5.2A PowerFLAT Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID (1) Pw (1) STL6NK55Z 550 V ... See More ⇒

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Detailed specifications: STL60N10F7, STL60NH3LL, STL60P4LLF6, STL62P3LLH6, STL66DN3LLH5, STL66N3LLH5, STL6N2VH5, STL6N3LLH6, IRFB4227, STL6P3LLH6, STL70N10F3, STL75NH3LL, STL7DN6LF3, STL7N10F7, STL7N6LF3, STL7N80K5, STL86N3LLH6AG

Keywords - STL6NM60N MOSFET specs

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