All MOSFET. STL8DN4LLF6 Datasheet

 

STL8DN4LLF6 Datasheet and Replacement


   Type Designator: STL8DN4LLF6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: POWERFLAT5X6
 

 STL8DN4LLF6 substitution

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STL8DN4LLF6 Datasheet (PDF)

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STL8DN4LLF6

STL8DN4LLF6Dual N-channel 40 V, 0.025 typ., 8 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island packageDatasheet - target specificationFeaturesOrder code VDS RDS(on)max ID0.03 (VGS=10 V)STL8DN4LLF6 40 V 8 A0.05 (VGS=4.5 V) Very low on-resistance High avalanche ruggednessPowerFLAT 5x6double islandApplications Switching

 8.1. Size:772K  st
 stl8dn6lf3.pdf pdf_icon

STL8DN4LLF6

STL8DN6LF3Dual N-channel 60 V, 22.5 m typ., 7.8 A STripFET III Power MOSFET in PowerFLAT 5x6 double island packageDatasheet production dataFeaturesRDS(on) Order code VDSS IDmaxSTL8DN6LF3 60 V

 8.2. Size:1021K  st
 stl8dn10lf3.pdf pdf_icon

STL8DN4LLF6

STL8DN10LF3Automotive-grade dual N-channel 100 V, 25 m typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island packageDatasheet production dataFeatures Order code VDS RDS(on) max IDSTL8DN10LF3 100 V 35 m 7.8 A Designed for automotive applications and 12AEC-Q101 qualified34 Logic level VGS(th)PowerFLAT 5x6 175 C junction

Datasheet: STL70N10F3 , STL75NH3LL , STL7DN6LF3 , STL7N10F7 , STL7N6LF3 , STL7N80K5 , STL86N3LLH6AG , STL8DN10LF3 , IRF9540 , STL8DN6LF3 , STL8N10F7 , STL8N10LF3 , STL8N80K5 , STL8NH3LL , STL8P2UH7 , STL8P4LLF6 , STL90N10F7 .

History: 2P829J9 | AOLF66417 | SDF5N100JAA

Keywords - STL8DN4LLF6 MOSFET datasheet

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