All MOSFET. STL8DN4LLF6 Datasheet

 

STL8DN4LLF6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STL8DN4LLF6
   Marking Code: 8DN4LLF6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4 nC
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: POWERFLAT5X6

 STL8DN4LLF6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STL8DN4LLF6 Datasheet (PDF)

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stl8dn4llf6.pdf

STL8DN4LLF6
STL8DN4LLF6

STL8DN4LLF6Dual N-channel 40 V, 0.025 typ., 8 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island packageDatasheet - target specificationFeaturesOrder code VDS RDS(on)max ID0.03 (VGS=10 V)STL8DN4LLF6 40 V 8 A0.05 (VGS=4.5 V) Very low on-resistance High avalanche ruggednessPowerFLAT 5x6double islandApplications Switching

 8.1. Size:772K  st
stl8dn6lf3.pdf

STL8DN4LLF6
STL8DN4LLF6

STL8DN6LF3Dual N-channel 60 V, 22.5 m typ., 7.8 A STripFET III Power MOSFET in PowerFLAT 5x6 double island packageDatasheet production dataFeaturesRDS(on) Order code VDSS IDmaxSTL8DN6LF3 60 V

 8.2. Size:1021K  st
stl8dn10lf3.pdf

STL8DN4LLF6
STL8DN4LLF6

STL8DN10LF3Automotive-grade dual N-channel 100 V, 25 m typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island packageDatasheet production dataFeatures Order code VDS RDS(on) max IDSTL8DN10LF3 100 V 35 m 7.8 A Designed for automotive applications and 12AEC-Q101 qualified34 Logic level VGS(th)PowerFLAT 5x6 175 C junction

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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