STL90N10F7 Datasheet and Replacement
Type Designator: STL90N10F7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 700 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: POWERFLAT5X6
STL90N10F7 substitution
STL90N10F7 Datasheet (PDF)
stl90n10f7.pdf

STL90N10F7 N-channel 100 V, 0.007 typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTL90N10F7 100 V 0.008 70 A 100 W 123 Among the lowest RDS(on) on the market 4 Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity PowerFLAT 5x6 High
stl90n6f7.pdf

STL90N6F7 N-channel 60 V, 0.0046 typ., 90 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R max I DS DS(on) DSTL90N6F7 60 V 0.0054 90 A 123 Among the lowest RDS(on) on the market 4 Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity PowerFLAT 5x6 High avalanche rugg
stl90n3llh6.pdf

STL90N3LLH6N-channel 30 V, 0.0038 , 24 A PowerFLAT (5x6)STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL90N3LLH6 30 V 0.0045 24 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmarkPowerFLAT ( 5x6 ) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Ver
Datasheet: STL8DN4LLF6 , STL8DN6LF3 , STL8N10F7 , STL8N10LF3 , STL8N80K5 , STL8NH3LL , STL8P2UH7 , STL8P4LLF6 , 5N60 , STL9N60M2 , STL9P2UH7 , STV160NF02LAT4 , STV160NF02LT4 , STV160NF03LAT4 , STV160NF03LT4 , STV200N55F3 , STV60NE06-16 .
History: NVMTS0D6N04C
Keywords - STL90N10F7 MOSFET datasheet
STL90N10F7 cross reference
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History: NVMTS0D6N04C



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