All MOSFET. STV160NF02LT4 Datasheet

 

STV160NF02LT4 Datasheet and Replacement


   Type Designator: STV160NF02LT4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 160 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 115 nC
   trⓘ - Rise Time: 800 nS
   Cossⓘ - Output Capacitance: 3000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: POWERSO-10
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STV160NF02LT4 Datasheet (PDF)

 ..1. Size:350K  st
 stv160nf02lt4.pdf pdf_icon

STV160NF02LT4

STV160NF02LN-CHANNEL 20V - 0.0016 - 160A PowerSO-10STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTV160NF02L 20 V

 3.1. Size:537K  st
 stv160nf02l.pdf pdf_icon

STV160NF02LT4

STV160NF02LN-CHANNEL 20V - 0.0016 - 160A PowerSO-10STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTV160NF02L 20 V

 3.2. Size:346K  st
 stv160nf02lat4.pdf pdf_icon

STV160NF02LT4

STV160NF02LAN-CHANNEL 20V - 0.0018 - 160A PowerSO-10STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTV160NF02LA 20 V

 3.3. Size:546K  st
 stv160nf02la.pdf pdf_icon

STV160NF02LT4

STV160NF02LAN-CHANNEL 20V - 0.0018 - 160A PowerSO-10STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTV160NF02LA 20 V

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History: HY3208AP | HY1804P | HY1603B

Keywords - STV160NF02LT4 MOSFET datasheet

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