IXFT60N25Q Datasheet. Specs and Replacement
Type Designator: IXFT60N25Q 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 360 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 1000 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
Package: TO268
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IXFT60N25Q substitution
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IXFT60N25Q datasheet
ixfh60n25q ixfk60n25q ixft60n25q.pdf
Advanced Technical Information IXFH 60N25Q HiPerFETTM VDSS = 250 V IXFK 60N25Q Power MOSFETs ID25 = 60 A IXFT 60N25Q Q-Class RDS(on) = 47 mW trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 250 ... See More ⇒
ixfh6n100q ixft6n100q.pdf
VDSS = 1000 V IXFH 6N100Q HiPerFETTM ID25 = 6 A IXFT 6N100Q Power MOSFETs RDS(on) = 1.9 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V VG... See More ⇒
ixfh69n30p ixft69n30p.pdf
IXFH 69N30P VDSS = 300 V PolarHTTM HiPerFET IXFT 69N30P ID25 = 69 A Power MOSFET RDS(on) 49 m trr 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuou... See More ⇒
Detailed specifications: IXFT26N60Q, IXFT30N50, IXFT32N50, IXFT32N50Q, IXFT40N30Q, IXFT4N100Q, IXFT52N30Q, IXFT58N20Q, RFP50N06, IXFT6N100Q, IXFT7N90, IXFT80N10Q, IXFT80N20Q, IXFX100N25, IXFX120N20, IXFX13N100, IXFX14N100
Keywords - IXFT60N25Q MOSFET specs
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