STW29NK50ZD Specs and Replacement
Type Designator: STW29NK50ZD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 350 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 29 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 710 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: TO-247
STW29NK50ZD substitution
- MOSFET ⓘ Cross-Reference Search
STW29NK50ZD datasheet
stw29nk50z.pdf
STW29NK50Z N-CHANNEL 500 V - 0.105 - 31A TO-247 Zener-Protected SuperMESH MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID PW STW29NK50Z 500 V ... See More ⇒
Detailed specifications: STW265N6F6AG, STW26NM60, STW26NM60ND, STW28N60M2, STW28N65M2, STW28NK60Z, STW28NM60ND, STW29NK50Z, 60N06, STW30N20, STW30NM60D, STW30NM60N, STW30NM60ND, STW31N65M5, STW32NM50N, STW33N20, STW33N60M2
Keywords - STW29NK50ZD MOSFET specs
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