STW30NM60D Specs and Replacement
Type Designator: STW30NM60D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 800 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm
Package: TO-247
STW30NM60D substitution
- MOSFET ⓘ Cross-Reference Search
STW30NM60D datasheet
stw30nm60d.pdf
STW30NM60D N-channel 600V - 0.125 - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS(on) ID STW30NM60D 600V ... See More ⇒
stb30nm60n stf30nm60n stp30nm60n stw30nm60n.pdf
STB30NM60N,STI30NM60N,STF30NM60N STP30NM60N, STW30NM60N N-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK Features RDS(on) VDSS @ Type ID PW TJmax max 3 3 1 2 1 STB30NM60N 650 V ... See More ⇒
stb30nm60n sti30nm60n stf30nm60n stp30nm60n stw30nm60n.pdf
STB30NM60N,STI30NM60N,STF30NM60N STP30NM60N, STW30NM60N N-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK Features RDS(on) VDSS @ Type ID PW TJmax max 3 3 1 2 1 STB30NM60N 650 V ... See More ⇒
stw30nm60nd stp30nm60nd stf30nm60nd sti30nm60nd stb30nm60nd.pdf
STx30NM60ND N-channel 600 V, 0.11 , 25 A FDmesh II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247 Features VDSS @TJ RDS(on) Type ID max max 3 3 2 2 2 STB30NM60ND 25 A I PAK 1 1 TO-247 STI30NM60ND 25 A STF30NM60ND 650 V 0.13 25 A(1) 3 STP30NM60ND 25 A 1 2 D PAK STW30NM60ND 25 A 1. Limited only by maximum temperature allowed 3 2 3 T... See More ⇒
Detailed specifications: STW26NM60ND, STW28N60M2, STW28N65M2, STW28NK60Z, STW28NM60ND, STW29NK50Z, STW29NK50ZD, STW30N20, AO4468, STW30NM60N, STW30NM60ND, STW31N65M5, STW32NM50N, STW33N20, STW33N60M2, STW34N65M5, STW36N55M5
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