IXFT6N100Q MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFT6N100Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 48 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
Package: TO268
IXFT6N100Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFT6N100Q Datasheet (PDF)
ixfh6n100q ixft6n100q.pdf
VDSS = 1000 VIXFH 6N100QHiPerFETTMID25 = 6 AIXFT 6N100QPower MOSFETsRDS(on) = 1.9 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 VVG
ixfh60n25q ixfk60n25q ixft60n25q.pdf
Advanced Technical InformationIXFH 60N25QHiPerFETTMVDSS = 250 VIXFK 60N25QPower MOSFETs ID25 = 60 AIXFT 60N25QQ-Class RDS(on) = 47 mWtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrLow Gate Charge and CapacitancesSymbol Test Conditions Maximum RatingsTO-247 AD (IXFH)VDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C; RGS = 1 MW 250
ixfh69n30p ixft69n30p.pdf
IXFH 69N30P VDSS = 300 VPolarHTTM HiPerFETIXFT 69N30P ID25 = 69 APower MOSFET RDS(on) 49 m trr 200 nsN-Channel Enhancement ModeFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25 C to 150 C 300 VVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGS Continuou
Datasheet: IXFT30N50 , IXFT32N50 , IXFT32N50Q , IXFT40N30Q , IXFT4N100Q , IXFT52N30Q , IXFT58N20Q , IXFT60N25Q , IRF2807 , IXFT7N90 , IXFT80N10Q , IXFT80N20Q , IXFX100N25 , IXFX120N20 , IXFX13N100 , IXFX14N100 , IXFX150N15 .
