STW33N20 Specs and Replacement

Type Designator: STW33N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: TO-247

STW33N20 substitution

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STW33N20 datasheet

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 sth33n20 sth33n20fi stw33n20.pdf pdf_icon

STW33N20

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STW33N20

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STW33N20

STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB VDS @ RDS(on) Order codes ID 3 2 3 TJmax max 1 2 1 2 I PAK TO-220FP STF33N60M2 26 A(1) TAB STI33N60M2 650 V 0.125 STP33N60M2 26 A STW33N60M2 3 3 2 2 1 ... See More ⇒

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 stb33n60dm2 stp33n60dm2 stw33n60dm2.pdf pdf_icon

STW33N20

STB33N60DM2, STP33N60DM2, STW33N60DM2 N-channel 600 V, 0.110 typ., 24 A MDmesh DM2 Power MOSFET in D PAK, TO-220 and TO-247 packages Datasheet - production data Features Order code V @ T R max. I DS Jmax. DS(on) D STB33N60DM2 650 V 0.130 24 A STP33N60DM2 650 V 0.130 24 A STW33N60DM2 650 V 0.130 24 A Fast-recovery body diode Extremely low gate charg... See More ⇒

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Detailed specifications: STW29NK50Z, STW29NK50ZD, STW30N20, STW30NM60D, STW30NM60N, STW30NM60ND, STW31N65M5, STW32NM50N, IRF840, STW33N60M2, STW34N65M5, STW36N55M5, STW36NM60ND, STW38N65M5, STW38NB20, STW3N170, STW40N20

Keywords - STW33N20 MOSFET specs

 STW33N20 cross reference

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 STW33N20 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.