STW36NM60ND MOSFET. Datasheet pdf. Equivalent
Type Designator: STW36NM60ND
Marking Code: 36NM60ND
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 29 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 80.4 nC
trⓘ - Rise Time: 53.4 nS
Cossⓘ - Output Capacitance: 168 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO-247
STW36NM60ND Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STW36NM60ND Datasheet (PDF)
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