IXFT7N90
MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFT7N90
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 180
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5
Ohm
Package:
TO268
IXFT7N90
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFT7N90
Datasheet (PDF)
0.1. Size:112K ixys
ixfh7n90q ixft7n90q.pdf 
www.DataSheet.co.krAdvanced Technical InformationIXFH 7N90Q VDSS = 900 VHiPerFETTMIXFT 7N90Q ID25 = 7 APower MOSFETsRDS(on) = 1.5 WQ-ClassN-Channel Enhancement Modetrr 250 nsAvalanche Rated, Low Qg, High dv/dtTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C; RGS = 1 MW 900 VVGS Continuous 20 VVGSM
9.1. Size:151K ixys
ixfh75n10q ixft75n10q.pdf
Advanced Technical InformationIXFH 75N10Q VDSS = 100 VHiPerFETTMIXFT 75N10Q ID25 = 75 APower MOSFETs RDS(on) = 20 mWQ-Classt 200nsrr N-Channel Enhancement ModeAvalanche Rated, High dv/dtLow Gate Charge and CapacitancesSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 M 100 VVGS Continuous
9.2. Size:52K ixys
ixfh70n15 ixft70n15.pdf
Advanced Technical InformationIXFH 70N15 VDSS = 150 VHiPerFETTMIXFT 70N15 ID25 = 70 APower MOSFETs RDS(on) = 28 mWtrr 250nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 150 VVDGR TJ = 25C to 150C; RGS = 1 MW 150 VVGS Continuous 20 VVGSM Transient 30 V(TAB)ID2
9.3. Size:131K ixys
ixfh70n30q3 ixft70n30q3.pdf
Advance Technical InformationHiperFETTM VDSS = 300VIXFT70N30Q3Power MOSFETs ID25 = 70AIXFH70N30Q3 Q3-Class RDS(on) 54m N-Channel Enhancement ModeAvalanche RatedTO-268 (IXFT)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VTO-247 (IXFH)VDGR TJ = 25C to 150C, RGS = 1M 300
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