STW56N60M2-4 MOSFET. Datasheet pdf. Equivalent

   Type Designator: STW56N60M2-4
   Marking Code: 56N60M2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 350 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 52 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 91 nC
   trⓘ - Rise Time: 26.5 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO-247-4

STW56N60M2-4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS