STW60NE10 Specs and Replacement

Type Designator: STW60NE10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 640 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO-247

STW60NE10 substitution

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STW60NE10 datasheet

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 stw60ne10.pdf pdf_icon

STW60NE10

STW60NE10 N - CHANNEL 100V - 0.016 - 60A TO-247 STripFET POWER MOSFET TYPE VDSS RDS(on) ID STW60NE10 100 V ... See More ⇒

 8.1. Size:569K  st
 stw60n65m5 stfw60n65m5.pdf pdf_icon

STW60NE10

STW60N65M5 STFW60N65M5 N-channel 650 V, 0.049 , 46 A MDmesh V Power MOSFET in TO-247, TO-3PF Features VDSS @ RDS(on) Order codes ID TJmax max STFW60N65M5 1 1 1 710 V ... See More ⇒

 8.2. Size:751K  st
 stw60nm50n.pdf pdf_icon

STW60NE10

STW60NM50N N-channel 500 V, 0.035 , 68 A, MDmesh II Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDSS (@Tjmax) RDS(on) max ID STW60NM50N 550 V ... See More ⇒

 8.3. Size:389K  st
 stw60n10.pdf pdf_icon

STW60NE10

STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STH60N10 100 V ... See More ⇒

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Detailed specifications: STW54NK30Z, STW55NM50N, STW56N60M2, STW56N60M2-4, STW56N65M2, STW56N65M2-4, STW57N65M5, STW57N65M5-4, AON7408, STW60NM50N, STW62N65M5, STW69N65M5, STW69N65M5-4, STW6NA80, STW70N60M2, STW75N20, STW78N65M5

Keywords - STW60NE10 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs