STW60NE10 Datasheet and Replacement
Type Designator: STW60NE10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 640 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TO-247
STW60NE10 substitution
STW60NE10 Datasheet (PDF)
stw60ne10.pdf
STW60NE10N - CHANNEL 100V - 0.016 - 60A TO-247STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTW60NE10 100 V
stw60n65m5 stfw60n65m5.pdf
STW60N65M5STFW60N65M5N-channel 650 V, 0.049 , 46 A MDmesh V Power MOSFETin TO-247, TO-3PFFeaturesVDSS @ RDS(on) Order codes IDTJmax maxSTFW60N65M5111710 V
stw60nm50n.pdf
STW60NM50NN-channel 500 V, 0.035 , 68 A, MDmesh II Power MOSFET in a TO-247 packageDatasheet - production dataFeatures Order code VDSS (@Tjmax) RDS(on) max IDSTW60NM50N 550 V
stw60n10.pdf
STH60N10/FISTW60N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTH60N10 100 V
Datasheet: STW54NK30Z , STW55NM50N , STW56N60M2 , STW56N60M2-4 , STW56N65M2 , STW56N65M2-4 , STW57N65M5 , STW57N65M5-4 , 2N7000 , STW60NM50N , STW62N65M5 , STW69N65M5 , STW69N65M5-4 , STW6NA80 , STW70N60M2 , STW75N20 , STW78N65M5 .
History: PK527BA
Keywords - STW60NE10 MOSFET datasheet
STW60NE10 cross reference
STW60NE10 equivalent finder
STW60NE10 lookup
STW60NE10 substitution
STW60NE10 replacement
History: PK527BA
LIST
Last Update
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
2n2907a datasheet | irfz24n | bd135 | d880 | 2n5457 equivalent | 2sc945 replacement | 9014 transistor | irfp260n datasheet