All MOSFET. STW60NE10 Datasheet

 

STW60NE10 Datasheet and Replacement


   Type Designator: STW60NE10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO-247
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STW60NE10 Datasheet (PDF)

 ..1. Size:202K  st
 stw60ne10.pdf pdf_icon

STW60NE10

STW60NE10N - CHANNEL 100V - 0.016 - 60A TO-247STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTW60NE10 100 V

 8.1. Size:569K  st
 stw60n65m5 stfw60n65m5.pdf pdf_icon

STW60NE10

STW60N65M5STFW60N65M5N-channel 650 V, 0.049 , 46 A MDmesh V Power MOSFETin TO-247, TO-3PFFeaturesVDSS @ RDS(on) Order codes IDTJmax maxSTFW60N65M5111710 V

 8.2. Size:751K  st
 stw60nm50n.pdf pdf_icon

STW60NE10

STW60NM50NN-channel 500 V, 0.035 , 68 A, MDmesh II Power MOSFET in a TO-247 packageDatasheet - production dataFeatures Order code VDSS (@Tjmax) RDS(on) max IDSTW60NM50N 550 V

 8.3. Size:389K  st
 stw60n10.pdf pdf_icon

STW60NE10

STH60N10/FISTW60N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTH60N10 100 V

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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: STW60N10 | STW65N80K5 | SUD08P06-155L-GE3 | STW69N65M5-4 | STW75NF30 | STW55NM50N | SUD50N10-34P

Keywords - STW60NE10 MOSFET datasheet

 STW60NE10 cross reference
 STW60NE10 equivalent finder
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