STW6NA80 MOSFET Datasheet: N-Ch, 800V, 5.4A. Full specification with pinout and replacement list

STW6NA80 Specs and Replacement

Type Designator: STW6NA80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO-247

STW6NA80 substitution

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STW6NA80 datasheet

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STW6NA80 STH6NA80FI N - CHANNEL 800V - 1.8 - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW6NA80 800 V ... See More ⇒

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STW6NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE VDSS RDS(on) ID STW6NA90 900 V ... See More ⇒

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STD6N95K5, STP6N95K5 STU6N95K5, STW6N95K5 Datasheet N-channel 950 V, 1 typ., 9 A MDmesh K5 Power MOSFETs in DPAK, TO-220, IPAK and TO-247 packages Features TAB TAB Order codes VDS RDS(on) max. ID PTOT 3 1 DPAK STD6N95K5 3 TO-220 STP6N95K5 2 1 950 V 1.25 9 A 90 W TAB STU6N95K5 STW6N95K5 DPAK 950 V worldwide best RDS(on) 3 2 IPAK 1 3 Worldwide best FOM ... See More ⇒

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