STW8NA80 MOSFET. Datasheet pdf. Equivalent
Type Designator: STW8NA80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 175 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.75 V
Maximum Drain Current |Id|: 7.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 75 nC
Rise Time (tr): 28 nS
Drain-Source Capacitance (Cd): 188 pF
Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm
Package: TO-247
STW8NA80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STW8NA80 Datasheet (PDF)
1.1. stw8na80.pdf 
Size:128K _update
1.2. stw8na80.pdf Size:48K _st2
STW8NA80 STH8NA80FI ? N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE VDSS RDS(on) ID 800 V < 1.50 ? 7.2 A STW8NA80 STH8NA80FI 800 V < 1.50 ? 4.5 A TYPICAL R = 1.3 ? DS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 2 LOW INTRINSIC CAPACITANCES 1 2 GATE GHARGE MINIMIZED 1 REDUCED THRESHOLD
4.1. stw8na60.pdf Size:123K _update
STW8NA60 STH8NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW8NA60 600 V < 1 Ω 8 A STH8NA60FI 600 V < 1 Ω 5 A TYPICAL R = 0.92 Ω DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 2 LOW INTRINSIC CAPACITANCES 1 2 1 GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
4.2. stw8na60.pdf Size:126K _st2
STW8NA60 STH8NA60FI ? N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW8NA60 600 V < 1 ? 8 A STH8NA60FI 600 V < 1 ? 5 A TYPICAL R = 0.92 ? DS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 2 LOW INTRINSIC CAPACITANCES 1 2 1 GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-247 ISO
Datasheet: PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .
