STW8NA80 Specs and Replacement

Type Designator: STW8NA80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 175 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 188 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-247

STW8NA80 substitution

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STW8NA80 datasheet

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STW8NA80

STW8NA80 STH8NA80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE VDSS RDS(on) ID 800 V ... See More ⇒

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STW8NA80

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STW8NA80

STW8NA60 STH8NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW8NA60 600 V ... See More ⇒

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STW8NA80

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Detailed specifications: STW7NA100, STW7NA80, STW7NA90, STW80NE06-10, STW80NF06, STW80NF55-08, STW88N65M5, STW8NA60, IRF1010E, STW8NB100, STW9NA80, STW9NK95Z, STWA12N120K5, STWA20N95K5, STWA45N65M5, STWA57N65M5, STWA88N65M5

Keywords - STW8NA80 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.