IXFX120N20 Specs and Replacement

Type Designator: IXFX120N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 560 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 2200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: TO247

IXFX120N20 substitution

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IXFX120N20 datasheet

 ..1. Size:1919K  ixys
 ixfx120n20 ixfk120n20.pdf pdf_icon

IXFX120N20

HiPerFETTM IXFX 120N20 VDSS = 200 V IXFK 120N20 ID25 = 120 A Power MOSFETs RDS(on) = 17 m Single MOSFET Die trr 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V VGS Continuous 20 V (TAB) G VGSM Transient 30 V D I... See More ⇒

 5.1. Size:123K  ixys
 ixfk120n25p ixfx120n25p.pdf pdf_icon

IXFX120N20

VDSS = 250 V IXFK 120N25P PolarHTTM HiPerFET ID25 = 120 A IXFX 120N25P Power MOSFET RDS(on) 24 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 250 V TO-264 (IXFK) VDGR TJ = 25 C to 175 C; RGS = 1 M 250 V VGS Continuous... See More ⇒

 6.1. Size:159K  ixys
 ixfk120n65x2 ixfx120n65x2.pdf pdf_icon

IXFX120N20

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFK120N65X2 Power MOSFET ID25 = 120A IXFX120N65X2 RDS(on) 24m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264P (IXFK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D Tab VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS... See More ⇒

 6.2. Size:131K  ixys
 ixfk120n30p3 ixfx120n30p3.pdf pdf_icon

IXFX120N20

Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V IXFK120N30P3 Power MOSFETs ID25 = 120A IXFX120N30P3 RDS(on) 27m trr 250ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 300 V Tab VDGR TJ = 25 C to 150 ... See More ⇒

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Detailed specifications: IXFT52N30Q, IXFT58N20Q, IXFT60N25Q, IXFT6N100Q, IXFT7N90, IXFT80N10Q, IXFT80N20Q, IXFX100N25, IRFP450, IXFX13N100, IXFX14N100, IXFX150N15, IXFX15N100, IXFX16N90, IXFX180N07, IXFX180N085, IXFX180N10

Keywords - IXFX120N20 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.