STWA57N65M5 Specs and Replacement

Type Designator: STWA57N65M5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.063 Ohm

Package: TO-247

STWA57N65M5 substitution

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STWA57N65M5 datasheet

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STWA57N65M5

STW57N65M5, STWA57N65M5 N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFETs in TO-247 and TO-247 long leads packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STW57N65M5 710 V 0.063 42 A STWA57N65M5 Worldwide best RDS(on)*area amongst the 3 2 silicon based devices 1 TO-247 Higher VDSS rating, high dv/dt capability TO-24... See More ⇒

Detailed specifications: STW8NA60, STW8NA80, STW8NB100, STW9NA80, STW9NK95Z, STWA12N120K5, STWA20N95K5, STWA45N65M5, STP80NF70, STWA88N65M5, STY100NM60N, STY100NS20FD, STY105NM50N, STY139N65M5, STY145N65M5, STY34NB50, MCH3333A

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