STWA57N65M5 MOSFET. Datasheet pdf. Equivalent
Type Designator: STWA57N65M5
SMD Transistor Code: 57N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 250 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 42 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 98 nC
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 115 pF
Maximum Drain-Source On-State Resistance (Rds): 0.063 Ohm
Package: TO-247
STWA57N65M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STWA57N65M5 Datasheet (PDF)
1.1. stw57n65m5 stwa57n65m5.pdf 
Size:1044K _update
STW57N65M5, STWA57N65M5 N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFETs in TO-247 and TO-247 long leads packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STW57N65M5 710 V 0.063 Ω 42 A STWA57N65M5 • Worldwide best RDS(on)*area amongst the 3 2 silicon based devices 1 TO-247 • Higher VDSS rating, high dv/dt capability TO-24
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