All MOSFET. STWA57N65M5 Datasheet

 

STWA57N65M5 Datasheet and Replacement


   Type Designator: STWA57N65M5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.063 Ohm
   Package: TO-247
 

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STWA57N65M5 Datasheet (PDF)

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STWA57N65M5

STW57N65M5, STWA57N65M5N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFETs in TO-247 and TO-247 long leads packagesDatasheet - production dataFeatures Order codes VDS @ TJmax RDS(on) max IDSTW57N65M5710 V 0.063 42 ASTWA57N65M5 Worldwide best RDS(on)*area amongst the 32silicon based devices1TO-247 Higher VDSS rating, high dv/dt capabilityTO-24

Datasheet: STW8NA60 , STW8NA80 , STW8NB100 , STW9NA80 , STW9NK95Z , STWA12N120K5 , STWA20N95K5 , STWA45N65M5 , 20N50 , STWA88N65M5 , STY100NM60N , STY100NS20FD , STY105NM50N , STY139N65M5 , STY145N65M5 , STY34NB50 , MCH3333A .

History: BUK9540-100A | IRF7907PBF | 19N10G-TM3-T | CHM9435AJGP | SLF80R850SJ | TK35A08N1 | VBZE80N10

Keywords - STWA57N65M5 MOSFET datasheet

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