All MOSFET. STY100NS20FD Datasheet

 

STY100NS20FD Datasheet and Replacement


   Type Designator: STY100NS20FD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 450 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: MAX247
 

 STY100NS20FD substitution

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STY100NS20FD Datasheet (PDF)

 ..1. Size:255K  st
 sty100ns20fd.pdf pdf_icon

STY100NS20FD

STY100NS20FDN-channel 200V - 0.022 - 100A - Max247MESH OVERLAY Power MOSFETGeneral featuresType VDSS RDS(on) IDSTY100NS20FD 200V

 7.1. Size:810K  st
 sty100nm60n.pdf pdf_icon

STY100NS20FD

STY100NM60NN-channel 600 V, 0.028 typ., 98 A MDmesh II Power MOSFET in a Max247 packageDatasheet production dataFeaturesVDSSType RDS(on) max ID@ TJmaxSTY100NM60N 650 V

 9.1. Size:902K  st
 sty105nm50n.pdf pdf_icon

STY100NS20FD

STY105NM50NN-channel 500 V, 0.019 typ., 110 A, MDmesh II Power MOSFET in a Max247 packageDatasheet - production dataFeaturesVDSS Order code@TjMAX RDS(on) max IDSTY105NM50N 550 V

Datasheet: STW9NA80 , STW9NK95Z , STWA12N120K5 , STWA20N95K5 , STWA45N65M5 , STWA57N65M5 , STWA88N65M5 , STY100NM60N , P60NF06 , STY105NM50N , STY139N65M5 , STY145N65M5 , STY34NB50 , MCH3333A , MCH3382 , MCH3421 , MCH3427 .

History: HGB070N12S | SM6107PSU | SVGP20110NSTR | RSH110N03TB1 | ME35N06 | TSM3548DCX6 | SIHFBC30A

Keywords - STY100NS20FD MOSFET datasheet

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