All MOSFET. STY100NS20FD Datasheet

 

STY100NS20FD MOSFET. Datasheet pdf. Equivalent


   Type Designator: STY100NS20FD
   Marking Code: Y100NS20FD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 450 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 360 nC
   trⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: MAX247

 STY100NS20FD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STY100NS20FD Datasheet (PDF)

 ..1. Size:255K  st
 sty100ns20fd.pdf

STY100NS20FD STY100NS20FD

STY100NS20FDN-channel 200V - 0.022 - 100A - Max247MESH OVERLAY Power MOSFETGeneral featuresType VDSS RDS(on) IDSTY100NS20FD 200V

 7.1. Size:810K  st
 sty100nm60n.pdf

STY100NS20FD STY100NS20FD

STY100NM60NN-channel 600 V, 0.028 typ., 98 A MDmesh II Power MOSFET in a Max247 packageDatasheet production dataFeaturesVDSSType RDS(on) max ID@ TJmaxSTY100NM60N 650 V

 9.1. Size:902K  st
 sty105nm50n.pdf

STY100NS20FD STY100NS20FD

STY105NM50NN-channel 500 V, 0.019 typ., 110 A, MDmesh II Power MOSFET in a Max247 packageDatasheet - production dataFeaturesVDSS Order code@TjMAX RDS(on) max IDSTY105NM50N 550 V

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: STH26N25FI

 

 
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