STY34NB50 MOSFET. Datasheet pdf. Equivalent
Type Designator: STY34NB50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 450 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 34 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 159 nC
Rise Time (tr): 32 nS
Drain-Source Capacitance (Cd): 950 pF
Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm
Package: MAX247
STY34NB50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STY34NB50 Datasheet (PDF)
1.1. sty34nb50.pdf 
Size:203K _update
STY34NB50 ® N - CHANNEL 500V - 0.11Ω - 34 A - Max247 PowerMESH MOSFET TYPE VDSS RDS(on) ID STY34NB50 500 V < 0.13 Ω 34 A TYPICAL R = 0.11 Ω DS(on) EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED 3 REDUCED VOLTAGE SPREAD 2 1 DESCRIPTION Using the latest high voltage MES
1.2. sty34nb50f.pdf Size:268K _st2
STY34NB50F N - CHANNEL 500V - 0.11? - 34 A - Max247 PowerMESH? MOSFET TYPE VDSS RDS(on) ID STY34NB50F 500 V < 0.14 ? 34 A TYPICAL R = 0.11 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED 3 REDUCED VOLTAGE SPREAD 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY?
1.3. sty34nb50.pdf Size:276K _st2
STY34NB50 N - CHANNEL 500V - 0.11? - 34 A - Max247 PowerMESH? MOSFET TYPE VDSS RDS(on) ID STY34NB50 500 V < 0.13 ? 34 A TYPICAL R = 0.11 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED 3 REDUCED VOLTAGE SPREAD 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY? M
Datasheet: PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .
