STY34NB50 Datasheet and Replacement
Type Designator: STY34NB50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 450 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 950 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: MAX247
STY34NB50 substitution
STY34NB50 Datasheet (PDF)
sty34nb50.pdf
STY34NB50N - CHANNEL 500V - 0.11 - 34 A - Max247PowerMESH MOSFETTYPE VDSS RDS(on) IDSTY34NB50 500 V
sty34nb50f.pdf
STY34NB50FN - CHANNEL 500V - 0.11 - 34 A - Max247PowerMESH MOSFETTYPE VDSS RDS(on) IDSTY34NB50F 500 V
Datasheet: STWA45N65M5 , STWA57N65M5 , STWA88N65M5 , STY100NM60N , STY100NS20FD , STY105NM50N , STY139N65M5 , STY145N65M5 , RFP50N06 , MCH3333A , MCH3382 , MCH3421 , MCH3427 , MCH3481 , MCH3486 , MCH5837 , MCH5839 .
Keywords - STY34NB50 MOSFET datasheet
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History: P6503FMA | DJR0417
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