MCH3333A Datasheet and Replacement

MCH3333A Power MOSFET 30V, 215m, 2.0A, Single P-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.comon resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features VDSS RDS(on) Max ID Max Low

MCH3375Ordering number : ENA0342SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3375ApplicationsFeatures ON-resistance RDS(on)1=227m (typ.) 4V drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Sourc

Ordering number:ENN6369P-Channel Silicon MOSFETMCH3302Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed swithcing.2167 4V drive.[MCH3302]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSANYO : MCPH3SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings Un

Ordering number : ENN7222MCH3317P-Channel Silicon MOSFETMCH3317Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167A 1.8V drive.[MCH3317]0.30.1532 10.652.03(Bottom view)1 : Gate2 : Source3 : DrainSpecifications1 2Absolute Maximum Ratings at Ta=25C(Top view)SANYO

Ordering number : ENN6863MCH3310P-Channel Silicon MOSFETMCH3310Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167 4V drive.[MCH3310]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSpecificationsSANYO : MCPH3Absolute Maximum Ratings at Ta=25CParameter Symbol Conditions R

MCH3383Ordering number : EN9000SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETLow Voltage Drive Switching DeviceMCH3383ApplicationsFeatures ON-resistance RDS(on)1=57m (typ.) 0.9V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-S

Ordering number : ENN7199MCH3319P-Channel Silicon MOSFETMCH3319Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167A 1.8V drive.[MCH3319]0.30.1532 10.652.03(Bottom view)1 : Gate2 : Source3 : DrainSpecifications1 2Absolute Maximum Ratings at Ta=25C(Top view)SANYO

MCH3376Ordering number : ENA1564SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3376ApplicationsFeatures Low ON-resistance. 1.8V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID

Ordering number : ENN6910MCH3309P-Channel Silicon MOSFETMCH3309Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167 2.5V drive.[MCH3309]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSpecificationsSANYO : MCPH3Absolute Maximum Ratings at Ta=25CParameter Symb

Ordering number : ENN7008MCH3308P-Channel Silicon MOSFETMCH3308Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167A 4V drive.[MCH3308]0.30.1532 10.652.031 : Gate2 : Source3 : DrainSANYO : MCPH3Specifications1 2Absolute Maximum Ratings at Ta=25CParameter Symbol Co

Ordering number : ENN6900MCH3306P-Channel Silicon MOSFETMCH3306Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167 1.8V drive.[MCH3306]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSpecificationsSANYO : MCPH3Absolute Maximum Ratings at Ta=25CParameter Symbol Conditions

Ordering number : ENA0857 MCH3374SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETMCH3374 General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS

Ordering number : ENN7213MCH3318P-Channel Silicon MOSFETMCH3318Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167A 1.8V drive.[MCH3318]0.30.1532 10.652.03(Bottom view)1 : Gate2 : Source3 : DrainSpecifications1 2Absolute Maximum Ratings at Ta=25C(Top view)SANYO

Ordering number : ENN6431AMCH3301P-Channel Silicon MOSFETMCH3301Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON resistance. unit : mm Ultrahigh-speed switching. 2167A 2.5V drive.[MCH3301]0.30.1532 10.652.03(Bottom view)1 : Gate2 : Source3 : Drain1 2(Top view) SANYO : MCPH3SpecificationsAbsolute Maximu

Ordering number : ENA0957 MCH3377SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3377ApplicationsFeatures Ultrahigh-speed switching. 1.8V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS 10 VDrain Current (DC)

Ordering number : ENN7007MCH3307P-Channel Silicon MOSFETMCH3307Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167A 2.5V drive.[MCH3307]0.30.1532 10.652.031 : Gate2 : Source3 : DrainSANYO : MCPH3Specifications1 2Absolute Maximum Ratings at Ta=25CParameter Symbol

Ordering number : ENN7009MCH3312P-Channel Silicon MOSFETMCH3312Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167A 4V drive.[MCH3312]0.30.1532 10.652.031 : Gate2 : Source3 : DrainSANYO : MCPH31 2SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Co

Ordering number : ENA1564BMCH3376Power MOSFEThttp://onsemi.com 20V, 241m , 1.5A, Single P-ChannelFeatures ESD diode-Protected gate Drive at low voltage:1.8V drive High speed switching and Low loss Low RDS(on) Pb-free and RoHS Compliance SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Sou

Ordering number : ENA1766MCH3382P-Channel Power MOSFEThttp://onsemi.com 12V, 2A, 198m , Single MCPH3Features ON-resistance RDS(on)1=152m (typ.) 1.2V drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS 9 VDrain C

MCH3374 Power MOSFET 12V, 70m, 3A, Single P-Channel This Power MOSFET is produced using ON Semiconductors trench technology,which is specifically designed to minimize gate charge and low www.onsemi.comon resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features VDSS RDS(on) Max ID Max Low On-R

Ordering number : ENA0957BMCH3377P-Channel Power MOSFEThttp://onsemi.com 20V, 3A, 83m , Single MCPH3Features Ultrahigh-spees switching. 1.8V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS