MCH3333A - описание и поиск аналогов

 ..1. Size:531K  onsemi
 mch3333a.pdf 

MCH3333A Power MOSFET 30V, 215m , 2.0A, Single P-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features VDSS RDS(on) Max ID Max Low

 9.1. Size:379K  1
 mch3375.pdf 

MCH3375 Ordering number ENA0342 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH3375 Applications Features ON-resistance RDS(on)1=227m (typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Sourc

 9.2. Size:40K  sanyo
 mch3302.pdf 

Ordering number ENN6369 P-Channel Silicon MOSFET MCH3302 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed swithcing. 2167 4V drive. [MCH3302] 0.3 0.15 3 1 2 0.65 2.0 1 Gate 2 Source 3 Drain SANYO MCPH3 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Un

 9.3. Size:30K  sanyo
 mch3317.pdf 

Ordering number ENN7222 MCH3317 P-Channel Silicon MOSFET MCH3317 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2167A 1.8V drive. [MCH3317] 0.3 0.15 3 2 1 0.65 2.0 3 (Bottom view) 1 Gate 2 Source 3 Drain Specifications 1 2 Absolute Maximum Ratings at Ta=25 C (Top view) SANYO

 9.4. Size:27K  sanyo
 mch3310.pdf 

Ordering number ENN6863 MCH3310 P-Channel Silicon MOSFET MCH3310 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2167 4V drive. [MCH3310] 0.3 0.15 3 1 2 0.65 2.0 1 Gate 2 Source 3 Drain Specifications SANYO MCPH3 Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions R

 9.5. Size:370K  sanyo
 mch3383.pdf 

MCH3383 Ordering number EN9000 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET Low Voltage Drive Switching Device MCH3383 Applications Features ON-resistance RDS(on)1=57m (typ.) 0.9V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-S

 9.6. Size:27K  sanyo
 mch3319.pdf 

Ordering number ENN7199 MCH3319 P-Channel Silicon MOSFET MCH3319 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2167A 1.8V drive. [MCH3319] 0.3 0.15 3 2 1 0.65 2.0 3 (Bottom view) 1 Gate 2 Source 3 Drain Specifications 1 2 Absolute Maximum Ratings at Ta=25 C (Top view) SANYO

 9.7. Size:276K  sanyo
 mch3376.pdf 

MCH3376 Ordering number ENA1564 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH3376 Applications Features Low ON-resistance. 1.8V drive. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID

 9.8. Size:27K  sanyo
 mch3309.pdf 

Ordering number ENN6910 MCH3309 P-Channel Silicon MOSFET MCH3309 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2167 2.5V drive. [MCH3309] 0.3 0.15 3 1 2 0.65 2.0 1 Gate 2 Source 3 Drain Specifications SANYO MCPH3 Absolute Maximum Ratings at Ta=25 C Parameter Symb

 9.9. Size:27K  sanyo
 mch3308.pdf 

Ordering number ENN7008 MCH3308 P-Channel Silicon MOSFET MCH3308 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2167A 4V drive. [MCH3308] 0.3 0.15 3 2 1 0.65 2.0 3 1 Gate 2 Source 3 Drain SANYO MCPH3 Specifications 1 2 Absolute Maximum Ratings at Ta=25 C Parameter Symbol Co

 9.10. Size:28K  sanyo
 mch3306.pdf 

Ordering number ENN6900 MCH3306 P-Channel Silicon MOSFET MCH3306 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2167 1.8V drive. [MCH3306] 0.3 0.15 3 1 2 0.65 2.0 1 Gate 2 Source 3 Drain Specifications SANYO MCPH3 Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions

 9.11. Size:264K  sanyo
 mch3374.pdf 

Ordering number ENA0857 MCH3374 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH3374 General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS

 9.12. Size:30K  sanyo
 mch3318.pdf 

Ordering number ENN7213 MCH3318 P-Channel Silicon MOSFET MCH3318 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2167A 1.8V drive. [MCH3318] 0.3 0.15 3 2 1 0.65 2.0 3 (Bottom view) 1 Gate 2 Source 3 Drain Specifications 1 2 Absolute Maximum Ratings at Ta=25 C (Top view) SANYO

 9.13. Size:30K  sanyo
 mch3301.pdf 

Ordering number ENN6431A MCH3301 P-Channel Silicon MOSFET MCH3301 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2167A 2.5V drive. [MCH3301] 0.3 0.15 3 2 1 0.65 2.0 3 (Bottom view) 1 Gate 2 Source 3 Drain 1 2 (Top view) SANYO MCPH3 Specifications Absolute Maximu

 9.14. Size:66K  sanyo
 mch3377.pdf 

Ordering number ENA0957 MCH3377 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH3377 Applications Features Ultrahigh-speed switching. 1.8V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC)

 9.15. Size:27K  sanyo
 mch3307.pdf 

Ordering number ENN7007 MCH3307 P-Channel Silicon MOSFET MCH3307 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2167A 2.5V drive. [MCH3307] 0.3 0.15 3 2 1 0.65 2.0 3 1 Gate 2 Source 3 Drain SANYO MCPH3 Specifications 1 2 Absolute Maximum Ratings at Ta=25 C Parameter Symbol

 9.16. Size:28K  sanyo
 mch3312.pdf 

Ordering number ENN7009 MCH3312 P-Channel Silicon MOSFET MCH3312 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2167A 4V drive. [MCH3312] 0.3 0.15 3 2 1 0.65 2.0 3 1 Gate 2 Source 3 Drain SANYO MCPH3 1 2 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Co

 9.17. Size:1015K  onsemi
 mch3376.pdf 

Ordering number ENA1564B MCH3376 Power MOSFET http //onsemi.com 20V, 241m , 1.5A, Single P-Channel Features ESD diode-Protected gate Drive at low voltage 1.8V drive High speed switching and Low loss Low RDS(on) Pb-free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Sou

 9.18. Size:281K  onsemi
 mch3382.pdf 

Ordering number ENA1766 MCH3382 P-Channel Power MOSFET http //onsemi.com 12V, 2A, 198m , Single MCPH3 Features ON-resistance RDS(on)1=152m (typ.) 1.2V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS 9 V Drain C

 9.19. Size:569K  onsemi
 mch3374.pdf 

MCH3374 Power MOSFET 12V, 70m , 3A, Single P-Channel This Power MOSFET is produced using ON Semiconductor s trench technology,which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features VDSS RDS(on) Max ID Max Low On-R

 9.20. Size:1020K  onsemi
 mch3377.pdf 

Ordering number ENA0957B MCH3377 P-Channel Power MOSFET http //onsemi.com 20V, 3A, 83m , Single MCPH3 Features Ultrahigh-spees switching. 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS