MCH5839
MOSFET. Datasheet pdf. Equivalent
Type Designator: MCH5839
Marking Code: YD
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4
V
|Id|ⓘ - Maximum Drain Current: 1.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 1.7
nC
trⓘ - Rise Time: 9.7
nS
Cossⓘ -
Output Capacitance: 26
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.266
Ohm
Package:
SOT-353
MCPH5
MCH5839
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MCH5839
Datasheet (PDF)
..1. Size:249K onsemi
mch5839.pdf 
Ordering number : ENA2165MCH5839P-Channel Power MOSFEThttp://onsemi.com 20V, 1.5A, 266m , Single MCPH5 with Schottky DiodeFeatures Composite type with an P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting Halogen free compliance [MOSFET] Low On-resistance RDS(on)1=205m (typ.)
8.1. Size:62K sanyo
mch5837.pdf
Ordering number : ENA0781A MCH5837SANYO SemiconductorsDATA SHEETMOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5837General-Purpose Switching DeviceApplicationsFeatures Composite type with an N-channel silicon MOSFET and a schottky barrier diode (SS10015M)contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance.
9.1. Size:48K sanyo
mch5802.pdf
Ordering number : ENN6961MCH5802MOSFET : P-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5802DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm(MCH3308) and a Schottky Barrier Diode (SBS006M) 2195contained in one package facilitating high-density[MCH5802]mounting.[MOSFET]0.3 0.15 Low ON-res
9.2. Size:40K sanyo
mch5805.pdf
Ordering number : ENN7125MCH5805MOSFET : P-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5805DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with a P-channel sillicon MOSFET unit : mm(MCH3314) and a Schottky barrier diode (SB01-05) 2195contained in one package facilitating high-density[MCH5805]mounting.0.3 0.15[MOSFET]4 5 Low O
9.3. Size:37K sanyo
mch5804.pdf
Ordering number : ENN6942MCH5804MOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5804DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm(MCH3408) and a Schottky Barrier Diode (SBS007M) 2195contained in one package facilitating high-density[MCH5804]mounting.0.3 0.15[MOSFET]4 5 Low
9.4. Size:48K sanyo
mch5803.pdf
Ordering number : ENN6958MCH5803MOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5803DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm(MCH3408) and a Schottky Barrier Diode (SBS006M) 2195contained in one package facilitating high-density[MCH5803]mounting.[MOSFET]0.3 0.15 Low ON-re
9.5. Size:39K sanyo
mch5801.pdf
Ordering number : ENN6941MCH5801MOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5801DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm(MCH3405) and a Schottky Barrier Diode (SBS007M) 2195contained in one package facilitating high-density[MCH5801]mounting.[MOSFET] 0.3 0.15 Low ON-res
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