Справочник MOSFET. MCH5839

 

MCH5839 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MCH5839
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 9.7 ns
   Cossⓘ - Выходная емкость: 26 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.266 Ohm
   Тип корпуса: SOT-353 MCPH5

 Аналог (замена) для MCH5839

 

 

MCH5839 Datasheet (PDF)

 ..1. Size:249K  onsemi
 mch5839.pdf

MCH5839 MCH5839

Ordering number : ENA2165MCH5839P-Channel Power MOSFEThttp://onsemi.com 20V, 1.5A, 266m , Single MCPH5 with Schottky DiodeFeatures Composite type with an P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting Halogen free compliance [MOSFET] Low On-resistance RDS(on)1=205m (typ.)

 8.1. Size:62K  sanyo
 mch5837.pdf

MCH5839 MCH5839

Ordering number : ENA0781A MCH5837SANYO SemiconductorsDATA SHEETMOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5837General-Purpose Switching DeviceApplicationsFeatures Composite type with an N-channel silicon MOSFET and a schottky barrier diode (SS10015M)contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance.

 9.1. Size:48K  sanyo
 mch5802.pdf

MCH5839 MCH5839

Ordering number : ENN6961MCH5802MOSFET : P-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5802DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm(MCH3308) and a Schottky Barrier Diode (SBS006M) 2195contained in one package facilitating high-density[MCH5802]mounting.[MOSFET]0.3 0.15 Low ON-res

 9.2. Size:40K  sanyo
 mch5805.pdf

MCH5839 MCH5839

Ordering number : ENN7125MCH5805MOSFET : P-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5805DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with a P-channel sillicon MOSFET unit : mm(MCH3314) and a Schottky barrier diode (SB01-05) 2195contained in one package facilitating high-density[MCH5805]mounting.0.3 0.15[MOSFET]4 5 Low O

 9.3. Size:37K  sanyo
 mch5804.pdf

MCH5839 MCH5839

Ordering number : ENN6942MCH5804MOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5804DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm(MCH3408) and a Schottky Barrier Diode (SBS007M) 2195contained in one package facilitating high-density[MCH5804]mounting.0.3 0.15[MOSFET]4 5 Low

 9.4. Size:48K  sanyo
 mch5803.pdf

MCH5839 MCH5839

Ordering number : ENN6958MCH5803MOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5803DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm(MCH3408) and a Schottky Barrier Diode (SBS006M) 2195contained in one package facilitating high-density[MCH5803]mounting.[MOSFET]0.3 0.15 Low ON-re

 9.5. Size:39K  sanyo
 mch5801.pdf

MCH5839 MCH5839

Ordering number : ENN6941MCH5801MOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeMCH5801DC / DC Converter ApplicationsFeatures Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm(MCH3405) and a Schottky Barrier Diode (SBS007M) 2195contained in one package facilitating high-density[MCH5801]mounting.[MOSFET] 0.3 0.15 Low ON-res

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