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SPC4567W Spec and Replacement


   Type Designator: SPC4567W
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
   Package: SOP-8P

 SPC4567W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPC4567W Specs

 ..1. Size:259K  syncpower
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SPC4567W

SPC4567W N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4567W is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-st... See More ⇒

 7.1. Size:288K  syncpower
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SPC4567W

SPC4567 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4567 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta... See More ⇒

 9.1. Size:294K  syncpower
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SPC4567W

SPC4527 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4527 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta... See More ⇒

 9.2. Size:247K  syncpower
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SPC4567W

SPC4533 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4533 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta... See More ⇒

Detailed specifications: SPC4516 , SPC4516B , SPC4527 , SPC4533 , SPC4533W , SPC4539 , SPC4539B , SPC4567 , 7N65 , SPC5604 , SPC6332 , SPC6601 , SPC6602 , SPC6604 , SPC6605 , SPD30N03S2L-10 , SPD50N03S2-07 .

History: AP10N4R5P | PTY12HN06 | VBA2625 | F640 | RJK0390DPA | AP4406A | F50N06

Keywords - SPC4567W MOSFET specs

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