SPC4567W. Аналоги и основные параметры
Наименование производителя: SPC4567W
Тип транзистора: MOSFET
Полярность: NP
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 6 ns
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.053 Ohm
Тип корпуса: SOP-8P
Аналог (замена) для SPC4567W
- подборⓘ MOSFET транзистора по параметрам
SPC4567W даташит
spc4567w.pdf
SPC4567W N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4567W is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-st
spc4567.pdf
SPC4567 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4567 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta
spc4527.pdf
SPC4527 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4527 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta
spc4533.pdf
SPC4533 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4533 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta
Другие IGBT... SPC4516, SPC4516B, SPC4527, SPC4533, SPC4533W, SPC4539, SPC4539B, SPC4567, 7N65, SPC5604, SPC6332, SPC6601, SPC6602, SPC6604, SPC6605, SPD30N03S2L-10, SPD50N03S2-07
History: TMU3N90 | AM4842N | AP70N06HD
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Список транзисторов
Обновления
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