All MOSFET. SPC5604 Datasheet

 

SPC5604 Datasheet and Replacement


   Type Designator: SPC5604
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TO-252-5L
 

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SPC5604 Datasheet (PDF)

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SPC5604

SPC5604 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC5604 is the N- and P-Channel enhancement Battery Powered System mode power field effect transistors are produced using DC/DC Converter high cell density, DMOS trench technology. This high LCD Display inverter density process is especially tailored to minimize on-state

Datasheet: SPC4516B , SPC4527 , SPC4533 , SPC4533W , SPC4539 , SPC4539B , SPC4567 , SPC4567W , IRFP250N , SPC6332 , SPC6601 , SPC6602 , SPC6604 , SPC6605 , SPD30N03S2L-10 , SPD50N03S2-07 , SPD50N03S2L-06 .

History: SPC6332

Keywords - SPC5604 MOSFET datasheet

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