SPC5604 Specs and Replacement

Type Designator: SPC5604

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: TO-252-5L

SPC5604 substitution

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SPC5604 datasheet

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 spc5604.pdf pdf_icon

SPC5604

SPC5604 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC5604 is the N- and P-Channel enhancement Battery Powered System mode power field effect transistors are produced using DC/DC Converter high cell density, DMOS trench technology. This high LCD Display inverter density process is especially tailored to minimize on-state... See More ⇒

Detailed specifications: SPC4516B, SPC4527, SPC4533, SPC4533W, SPC4539, SPC4539B, SPC4567, SPC4567W, IRFP250N, SPC6332, SPC6601, SPC6602, SPC6604, SPC6605, SPD30N03S2L-10, SPD50N03S2-07, SPD50N03S2L-06

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