All MOSFET. SPC6602 Datasheet

 

SPC6602 Datasheet and Replacement


   Type Designator: SPC6602
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TSOP-6P
 

 SPC6602 substitution

   - MOSFET ⓘ Cross-Reference Search

 

SPC6602 Datasheet (PDF)

 ..1. Size:238K  syncpower
 spc6602.pdf pdf_icon

SPC6602

SPC6602 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6602 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

 8.1. Size:293K  syncpower
 spc6605.pdf pdf_icon

SPC6602

SPC6605 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6605 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-state

 8.2. Size:234K  syncpower
 spc6604.pdf pdf_icon

SPC6602

SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6604 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

 8.3. Size:263K  syncpower
 spc6601.pdf pdf_icon

SPC6602

SPC6601 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6601 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

SHOW MORE

Datasheet: SPC4533W , SPC4539 , SPC4539B , SPC4567 , SPC4567W , SPC5604 , SPC6332 , SPC6601 , 2N7000 , SPC6604 , SPC6605 , SPD30N03S2L-10 , SPD50N03S2-07 , SPD50N03S2L-06 , SPD50N03S2L-06T , SPI80N06S-80 , SPM1007 .

History: 2SK1679 | IRF7821GPBF | 2SK295 | CSD16342Q5A | AON7534 | IRFBE30L | P06P03LCGA

Keywords - SPC6602 MOSFET datasheet

 SPC6602 cross reference
 SPC6602 equivalent finder
 SPC6602 lookup
 SPC6602 substitution
 SPC6602 replacement

 

 
Back to Top

 


 
.