SPC6602 - Даташиты. Аналоги. Основные параметры
Наименование производителя: SPC6602
Тип транзистора: MOSFET
Полярность: NP
Pd ⓘ - Максимальная рассеиваемая мощность: 1.15 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 12 ns
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
Тип корпуса: TSOP-6P
Аналог (замена) для SPC6602
SPC6602 Datasheet (PDF)
spc6602.pdf

SPC6602 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6602 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta
spc6605.pdf

SPC6605 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6605 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-state
spc6604.pdf

SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6604 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta
spc6601.pdf

SPC6601 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6601 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta
Другие MOSFET... SPC4533W , SPC4539 , SPC4539B , SPC4567 , SPC4567W , SPC5604 , SPC6332 , SPC6601 , IRLZ44N , SPC6604 , SPC6605 , SPD30N03S2L-10 , SPD50N03S2-07 , SPD50N03S2L-06 , SPD50N03S2L-06T , SPI80N06S-80 , SPM1007 .
History: AO4354 | IRF4104S | IXFX90N20Q | AO4427 | HY75N10T | PMPB27EP | BRCS120P012ZJ
History: AO4354 | IRF4104S | IXFX90N20Q | AO4427 | HY75N10T | PMPB27EP | BRCS120P012ZJ



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