Справочник MOSFET. SPC6602

 

SPC6602 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SPC6602
   Тип транзистора: MOSFET
   Полярность: NP
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.15 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2.8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 12 ns
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
   Тип корпуса: TSOP-6P
 

 Аналог (замена) для SPC6602

   - подбор ⓘ MOSFET транзистора по параметрам

 

SPC6602 Datasheet (PDF)

 ..1. Size:238K  syncpower
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SPC6602

SPC6602 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6602 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

 8.1. Size:293K  syncpower
spc6605.pdfpdf_icon

SPC6602

SPC6605 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6605 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-state

 8.2. Size:234K  syncpower
spc6604.pdfpdf_icon

SPC6602

SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6604 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

 8.3. Size:263K  syncpower
spc6601.pdfpdf_icon

SPC6602

SPC6601 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6601 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

Другие MOSFET... SPC4533W , SPC4539 , SPC4539B , SPC4567 , SPC4567W , SPC5604 , SPC6332 , SPC6601 , 2N7000 , SPC6604 , SPC6605 , SPD30N03S2L-10 , SPD50N03S2-07 , SPD50N03S2L-06 , SPD50N03S2L-06T , SPI80N06S-80 , SPM1007 .

History: AP30P10GI | HGK012NE6A | BLP02N06-T | AP16N50P | 2SK2666 | DH8004B | AP3C010H

 

 
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