All MOSFET. SPN10T10 Datasheet

 

SPN10T10 Datasheet and Replacement


   Type Designator: SPN10T10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO-220 TO-220F
 

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SPN10T10 Datasheet (PDF)

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SPN10T10

SPN10T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Powered System The SPN10T10 is the N-Channel logic enhancement mode DC/DC Converter power field effect transistor which is produced using super Load Switch high cell density DMOS trench technology. The SPN10T10 has been designed specifically to improve the overall efficiency of DC/DC converters using eith

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SPN10T10

SPN1012 N-Channel Enhancement Mode MOSFETDESCRIPTION APPLICATIONS Drivers : Relays/Solenoids/Lamps/Hammers The SPN1012 is the N-Channel enhancement mode Power Supply Converter Circuits power field effect transistors are produced using high cell Load/Power Switching Cell Phones, Pagers density , DMOS trench technology. This high density process is especially tailored to mi

Datasheet: SPI80N06S-80 , SPM1007 , SPM1008 , SPMT16040F , SPMT9200F , SPN05T10 , SPN09T10 , SPN1012 , RFP50N06 , SPN11T10 , SPN12T20 , SPN30T10 , SPN50T10 , SPN65T10 , SPN80T10 , SPP08P06P , SPP14N05 .

History: TPC65R280D | CS50N06P | FDZ204P | SSM3K335R | NCV8408 | IRF7815PBF | APT47N60BCFG

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