SPN10T10 Specs and Replacement

Type Designator: SPN10T10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 56 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: TO-220 TO-220F

SPN10T10 substitution

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SPN10T10 datasheet

 ..1. Size:291K  syncpower
 spn10t10.pdf pdf_icon

SPN10T10

SPN10T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Powered System The SPN10T10 is the N-Channel logic enhancement mode DC/DC Converter power field effect transistor which is produced using super Load Switch high cell density DMOS trench technology. The SPN10T10 has been designed specifically to improve the overall efficiency of DC/DC converters using eith... See More ⇒

 9.1. Size:177K  syncpower
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SPN10T10

SPN1012 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Drivers Relays/Solenoids/Lamps/Hammers The SPN1012 is the N-Channel enhancement mode Power Supply Converter Circuits power field effect transistors are produced using high cell Load/Power Switching Cell Phones, Pagers density , DMOS trench technology. This high density process is especially tailored to mi... See More ⇒

Detailed specifications: SPI80N06S-80, SPM1007, SPM1008, SPMT16040F, SPMT9200F, SPN05T10, SPN09T10, SPN1012, AON7410, SPN11T10, SPN12T20, SPN30T10, SPN50T10, SPN65T10, SPN80T10, SPP08P06P, SPP14N05

Keywords - SPN10T10 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.