All MOSFET. SPN50T10 Datasheet

 

SPN50T10 Datasheet and Replacement


   Type Designator: SPN50T10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 166 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO-220-3L
 

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SPN50T10 Datasheet (PDF)

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SPN50T10

SPN50T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Powered System The SPN50T10 is the N-Channel logic enhancement mode DC/DC Converter power field effect transistor which is produced using super Load Switch high cell density DMOS trench technology. The SPN80T10has been designed specifically to improve the overall efficiency of DC/DC converters usin

Datasheet: SPMT9200F , SPN05T10 , SPN09T10 , SPN1012 , SPN10T10 , SPN11T10 , SPN12T20 , SPN30T10 , AON7506 , SPN65T10 , SPN80T10 , SPP08P06P , SPP14N05 , SPP15P10P , SPP15P10PH , SPP15P10PL , SPP18P06PG .

History: AOW29S50 | AO4862E

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