SPN80T10 Specs and Replacement

Type Designator: SPN80T10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 166 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0071 Ohm

Package: TO-220-3L

SPN80T10 substitution

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SPN80T10 datasheet

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SPN80T10

SPN80T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Powered System The SPN80T10 is the N-Channel logic enhancement mode DC/DC Converter power field effect transistor which is produced using super Load Switch high cell density DMOS trench technology. The SPN80T10 has been designed specifically to improve the overall efficiency of DC/DC converters usin... See More ⇒

Detailed specifications: SPN09T10, SPN1012, SPN10T10, SPN11T10, SPN12T20, SPN30T10, SPN50T10, SPN65T10, IRF530, SPP08P06P, SPP14N05, SPP15P10P, SPP15P10PH, SPP15P10PL, SPP18P06PG, SPP20N05L, SPP22N05

Keywords - SPN80T10 MOSFET specs

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