All MOSFET. SPN80T10 Datasheet

 

SPN80T10 Datasheet and Replacement


   Type Designator: SPN80T10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 166 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0071 Ohm
   Package: TO-220-3L
 

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SPN80T10 Datasheet (PDF)

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SPN80T10

SPN80T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Powered System The SPN80T10 is the N-Channel logic enhancement mode DC/DC Converter power field effect transistor which is produced using super Load Switch high cell density DMOS trench technology. The SPN80T10has been designed specifically to improve the overall efficiency of DC/DC converters usin

Datasheet: SPN09T10 , SPN1012 , SPN10T10 , SPN11T10 , SPN12T20 , SPN30T10 , SPN50T10 , SPN65T10 , AO4407 , SPP08P06P , SPP14N05 , SPP15P10P , SPP15P10PH , SPP15P10PL , SPP18P06PG , SPP20N05L , SPP22N05 .

History: DH030N03P | NVMFD5489NL

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