SPP15P10PL
MOSFET. Datasheet pdf. Equivalent
Type Designator: SPP15P10PL
Marking Code: 15P10PL
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 128
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 47
nC
trⓘ - Rise Time: 21
nS
Cossⓘ -
Output Capacitance: 272
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27
Ohm
Package: PG-TO220-3
SPP15P10PL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPP15P10PL
Datasheet (PDF)
..1. Size:761K infineon
spp15p10pl spp15p10plh.pdf
SPP15P10PLH SIPMOS Power-TransistorProduct SummaryFeaturesV -100 VDS P-ChannelR 0.20DS(on),max Enhancement modeI -15 AD logic level Avalanche ratedPG-TO220-3 Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Qualified according to AEC Q101 Type Package Marking Lead free PackingSPP15P10PL H PG-TO220-3
5.1. Size:639K 1
spd15p10pg spp15p10pg.pdf
SPP15P10P GSPD15P10P GSIPMOS Small-Signal-TransistorProduct SummaryFeaturesV -100 VDS P-ChannelR 0.24DS(on),max Enhancement modeI -15 AD Normal level Avalanche ratedPG-TO220-3 PG-TO252-3 Pb-free lead plating; RoHS compliantType Package Marking Lead free PackingSPP15P10P G PG-TO220-3 15P10P Yes Non drySPD15P10P G PG-TO252-3 15P10P Yes N
5.2. Size:824K infineon
spp15p10p spp15p10ph.pdf
SPP15P10P HSIPMOS Small-Signal-TransistorProduct SummaryFeaturesV -100 VDS P-ChannelR 0.24DS(on),max Enhancement modeI -15 AD Normal level Avalanche ratedPG-TO220-3 Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249_2_21 Qualified according to AEC Q101 Type Package Marking Lead free PackingSPP15P10PH PG-
5.3. Size:243K inchange semiconductor
spp15p10p.pdf
isc P-Channel MOSFET Transistor SPP15P10PISPP15P10PFEATURESStatic drain-source on-resistance:RDS(on)0.24Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient and
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