SPP22N05 Specs and Replacement
Type Designator: SPP22N05
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TO-220AB
SPP22N05 substitution
- MOSFET ⓘ Cross-Reference Search
SPP22N05 datasheet
buz101s spp22n05.pdf
BUZ 101 S Preliminary data SPP22N05 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 101 S 55 V 22 A 0.06 TO-220 AB Q67040-S4013-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 C 22 TC... See More ⇒
Detailed specifications: SPN80T10, SPP08P06P, SPP14N05, SPP15P10P, SPP15P10PH, SPP15P10PL, SPP18P06PG, SPP20N05L, BS170, SPP77N05, SPP80N05, SPP80N05L, SPP80N06S-08, SPP80P06P, SPP80P06PG, SPR80N03, SPU07N20G
Keywords - SPP22N05 MOSFET specs
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