SQ1421EEH Datasheet and Replacement
Type Designator: SQ1421EEH
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 36 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: SOT-363
SQ1421EEH substitution
SQ1421EEH Datasheet (PDF)
sq1421eeh.pdf
SQ1421EEHwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 60DefinitionRDS(on) () at VGS = - 10 V 0.290 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.395 AEC-Q101 QualifieddID (A) - 1.6 100 % Rg and UIS TestedConfiguration Single Typical
sq1421edh.pdf
SQ1421EDHwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) MOSFETFEATURESSOT-363 TrenchFET power MOSFETSC-70 Single (6 leads) AEC-Q101 qualifiedS4 100 % Rg and UIS testedD5D Typical ESD protection: 800 V6 Material categorization: for definitions of compliance please see www.vishay.com/doc?999123G2D1(1, 2, 5, 6) D
sq1420eeh.pdf
SQ1420EEHwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 60 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.140 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.200 100 % Rg TestedID (A) 1.6 Typical ESD Protection: 800 VConfiguration
Datasheet: SPP80N05L , SPP80N06S-08 , SPP80P06P , SPP80P06PG , SPR80N03 , SPU07N20G , SPW55N80C3 , SQ1420EEH , 20N50 , SQ1431EH , SQ1470AEH , SQ1470EH , SQ1539EH , SQ1563AEH , SQ1902AEL , SQ1912AEEH , SQ1912EEH .
Keywords - SQ1421EEH MOSFET datasheet
SQ1421EEH cross reference
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SQ1421EEH substitution
SQ1421EEH replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: VBM16R04 | IRFI734G
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