All MOSFET. SQ1431EH Datasheet

 

SQ1431EH Datasheet and Replacement


   Type Designator: SQ1431EH
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 44 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
   Package: SOT-363
 

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SQ1431EH Datasheet (PDF)

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SQ1431EH

SQ1431EHwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 30DefinitionRDS(on) () at VGS = - 10 V 0.175 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.300 AEC-Q101 QualifiedcID (A) - 3 100 % Rg and UIS TestedConfiguration Single Compliant

Datasheet: SPP80N06S-08 , SPP80P06P , SPP80P06PG , SPR80N03 , SPU07N20G , SPW55N80C3 , SQ1420EEH , SQ1421EEH , CS150N03A8 , SQ1470AEH , SQ1470EH , SQ1539EH , SQ1563AEH , SQ1902AEL , SQ1912AEEH , SQ1912EEH , SQ2301ES .

History: AOI1N60 | CEU04N7G | APM2054ND | IRLR8256PBF | PHD97NQ03LT | APT24M80S | IRFS9530

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