SQ1431EH Specs and Replacement
Type Designator: SQ1431EH
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 44 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
Package: SOT-363
SQ1431EH substitution
- MOSFET ⓘ Cross-Reference Search
SQ1431EH datasheet
sq1431eh.pdf
SQ1431EH www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 30 Definition RDS(on) ( ) at VGS = - 10 V 0.175 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.300 AEC-Q101 Qualifiedc ID (A) - 3 100 % Rg and UIS Tested Configuration Single Compliant... See More ⇒
Detailed specifications: SPP80N06S-08, SPP80P06P, SPP80P06PG, SPR80N03, SPU07N20G, SPW55N80C3, SQ1420EEH, SQ1421EEH, IRF520, SQ1470AEH, SQ1470EH, SQ1539EH, SQ1563AEH, SQ1902AEL, SQ1912AEEH, SQ1912EEH, SQ2301ES
Keywords - SQ1431EH MOSFET specs
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