SQ1470AEH MOSFET. Datasheet pdf. Equivalent
Type Designator: SQ1470AEH
Marking Code: 9O
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
|Id|ⓘ - Maximum Drain Current: 1.7 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 4.2 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 65 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: SOT-363
SQ1470AEH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQ1470AEH Datasheet (PDF)
sq1470aeh.pdf
SQ1470AEHwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 30 AEC-Q101 qualifiedRDS(on) () at VGS = 4.5 V 0.065 100 % Rg and UIS testedRDS(on) () at VGS = 2.5 V 0.095 Material categorization:ID (A) 1.7for definitions of compliance please see Configuration Single w
sq1470eh.pdf
SQ1470EHwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 4.5 V 0.065 TrenchFET Power MOSFETRDS(on) () at VGS = 2.5 V 0.095 AEC-Q101 QualifieddID (A) 2.8 100 % Rg and UIS TestedConfiguration Single Compliant to R
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