SQ1470AEH Specs and Replacement

Type Designator: SQ1470AEH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: SOT-363

SQ1470AEH substitution

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SQ1470AEH datasheet

 ..1. Size:273K  vishay
 sq1470aeh.pdf pdf_icon

SQ1470AEH

SQ1470AEH www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 30 AEC-Q101 qualified RDS(on) ( ) at VGS = 4.5 V 0.065 100 % Rg and UIS tested RDS(on) ( ) at VGS = 2.5 V 0.095 Material categorization ID (A) 1.7 for definitions of compliance please see Configuration Single w... See More ⇒

 8.1. Size:164K  vishay
 sq1470eh.pdf pdf_icon

SQ1470AEH

SQ1470EH www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 30 Definition RDS(on) ( ) at VGS = 4.5 V 0.065 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 2.5 V 0.095 AEC-Q101 Qualifiedd ID (A) 2.8 100 % Rg and UIS Tested Configuration Single Compliant to R... See More ⇒

Detailed specifications: SPP80P06P, SPP80P06PG, SPR80N03, SPU07N20G, SPW55N80C3, SQ1420EEH, SQ1421EEH, SQ1431EH, IRF2807, SQ1470EH, SQ1539EH, SQ1563AEH, SQ1902AEL, SQ1912AEEH, SQ1912EEH, SQ2301ES, SQ2303ES

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