All MOSFET. SQ1470AEH Datasheet

 

SQ1470AEH Datasheet and Replacement


   Type Designator: SQ1470AEH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT-363
 

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SQ1470AEH Datasheet (PDF)

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SQ1470AEH

SQ1470AEHwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 30 AEC-Q101 qualifiedRDS(on) () at VGS = 4.5 V 0.065 100 % Rg and UIS testedRDS(on) () at VGS = 2.5 V 0.095 Material categorization:ID (A) 1.7for definitions of compliance please see Configuration Single w

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SQ1470AEH

SQ1470EHwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 4.5 V 0.065 TrenchFET Power MOSFETRDS(on) () at VGS = 2.5 V 0.095 AEC-Q101 QualifieddID (A) 2.8 100 % Rg and UIS TestedConfiguration Single Compliant to R

Datasheet: SPP80P06P , SPP80P06PG , SPR80N03 , SPU07N20G , SPW55N80C3 , SQ1420EEH , SQ1421EEH , SQ1431EH , IRFB31N20D , SQ1470EH , SQ1539EH , SQ1563AEH , SQ1902AEL , SQ1912AEEH , SQ1912EEH , SQ2301ES , SQ2303ES .

History: FQD19N10TM | RSS120N03FU6TB | DMG3402L | UTT6NP10G-S08-R | SIA537EDJ | AUIRL2203N | QM2N7002E3K1

Keywords - SQ1470AEH MOSFET datasheet

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