All MOSFET. SQ1470EH Datasheet

 

SQ1470EH MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQ1470EH
   Marking Code: 9C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 4.4 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT-363

 SQ1470EH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ1470EH Datasheet (PDF)

 ..1. Size:164K  vishay
 sq1470eh.pdf

SQ1470EH SQ1470EH

SQ1470EHwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 4.5 V 0.065 TrenchFET Power MOSFETRDS(on) () at VGS = 2.5 V 0.095 AEC-Q101 QualifieddID (A) 2.8 100 % Rg and UIS TestedConfiguration Single Compliant to R

 8.1. Size:273K  vishay
 sq1470aeh.pdf

SQ1470EH SQ1470EH

SQ1470AEHwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 30 AEC-Q101 qualifiedRDS(on) () at VGS = 4.5 V 0.065 100 % Rg and UIS testedRDS(on) () at VGS = 2.5 V 0.095 Material categorization:ID (A) 1.7for definitions of compliance please see Configuration Single w

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