All MOSFET. SQ1539EH Datasheet

 

SQ1539EH Datasheet and Replacement


   Type Designator: SQ1539EH
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.85 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: SOT-363
 

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SQ1539EH Datasheet (PDF)

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SQ1539EH

SQ1539EHwww.vishay.comVishay SiliconixN-and P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETN-CHANNEL P-CHANNEL AEC-Q101 qualifiedVDS (V) 30 -30 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.280 0.940 Material categorization:RDS(on) () at VGS = 4.5 V 0.380 1.800for definitions of compliance please seeID (

Datasheet: SPR80N03 , SPU07N20G , SPW55N80C3 , SQ1420EEH , SQ1421EEH , SQ1431EH , SQ1470AEH , SQ1470EH , AON6380 , SQ1563AEH , SQ1902AEL , SQ1912AEEH , SQ1912EEH , SQ2301ES , SQ2303ES , SQ2308BES , SQ2308CES .

History: 2SK3457 | PSMN4R0-30YL | CHM9410JGP | AP10TN135P | HY18N20T | NVMFS6H852NL | TK28N65W

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