All MOSFET. SQ1539EH Datasheet

 

SQ1539EH MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQ1539EH
   Marking Code: 9R
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6 V
   |Id|ⓘ - Maximum Drain Current: 0.85 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 1 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: SOT-363

 SQ1539EH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ1539EH Datasheet (PDF)

 ..1. Size:305K  vishay
 sq1539eh.pdf

SQ1539EH SQ1539EH

SQ1539EHwww.vishay.comVishay SiliconixN-and P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETN-CHANNEL P-CHANNEL AEC-Q101 qualifiedVDS (V) 30 -30 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.280 0.940 Material categorization:RDS(on) () at VGS = 4.5 V 0.380 1.800for definitions of compliance please seeID (

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