SQ1539EH Specs and Replacement

Type Designator: SQ1539EH

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.85 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 14 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: SOT-363

SQ1539EH substitution

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SQ1539EH datasheet

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SQ1539EH

SQ1539EH www.vishay.com Vishay Siliconix N-and P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET N-CHANNEL P-CHANNEL AEC-Q101 qualified VDS (V) 30 -30 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.280 0.940 Material categorization RDS(on) ( ) at VGS = 4.5 V 0.380 1.800 for definitions of compliance please see ID (... See More ⇒

Detailed specifications: SPR80N03, SPU07N20G, SPW55N80C3, SQ1420EEH, SQ1421EEH, SQ1431EH, SQ1470AEH, SQ1470EH, IRFZ24N, SQ1563AEH, SQ1902AEL, SQ1912AEEH, SQ1912EEH, SQ2301ES, SQ2303ES, SQ2308BES, SQ2308CES

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