All MOSFET. SQ1563AEH Datasheet

 

SQ1563AEH Datasheet and Replacement


   Type Designator: SQ1563AEH
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.85 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: SOT-363
 

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SQ1563AEH Datasheet (PDF)

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SQ1563AEH

SQ1563AEHwww.vishay.comVishay SiliconixN-and P-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETN-CHANNEL P-CHANNEL 100 % Rg and UIS testedVDS (V) 20 -20 AEC-Q101 qualified cRDS(on) () at VGS = 4.5 V 0.280 0.490 Material categorization: RDS(on) () at VGS = 2.5 V 0.360 0.750for definitions of compliance please see

Datasheet: SPU07N20G , SPW55N80C3 , SQ1420EEH , SQ1421EEH , SQ1431EH , SQ1470AEH , SQ1470EH , SQ1539EH , 7N60 , SQ1902AEL , SQ1912AEEH , SQ1912EEH , SQ2301ES , SQ2303ES , SQ2308BES , SQ2308CES , SQ2308ES .

History: GSM3400

Keywords - SQ1563AEH MOSFET datasheet

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