SQ1563AEH Specs and Replacement

Type Designator: SQ1563AEH

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.85 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 22 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: SOT-363

SQ1563AEH substitution

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SQ1563AEH datasheet

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SQ1563AEH

SQ1563AEH www.vishay.com Vishay Siliconix N-and P-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET N-CHANNEL P-CHANNEL 100 % Rg and UIS tested VDS (V) 20 -20 AEC-Q101 qualified c RDS(on) ( ) at VGS = 4.5 V 0.280 0.490 Material categorization RDS(on) ( ) at VGS = 2.5 V 0.360 0.750 for definitions of compliance please see ... See More ⇒

Detailed specifications: SPU07N20G, SPW55N80C3, SQ1420EEH, SQ1421EEH, SQ1431EH, SQ1470AEH, SQ1470EH, SQ1539EH, 2N60, SQ1902AEL, SQ1912AEEH, SQ1912EEH, SQ2301ES, SQ2303ES, SQ2308BES, SQ2308CES, SQ2308ES

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