All MOSFET. SQ1563AEH Datasheet

 

SQ1563AEH MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQ1563AEH
   Marking Code: 9Q
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 0.85 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 0.93 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: SOT-363

 SQ1563AEH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ1563AEH Datasheet (PDF)

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 sq1563aeh.pdf

SQ1563AEH SQ1563AEH

SQ1563AEHwww.vishay.comVishay SiliconixN-and P-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETN-CHANNEL P-CHANNEL 100 % Rg and UIS testedVDS (V) 20 -20 AEC-Q101 qualified cRDS(on) () at VGS = 4.5 V 0.280 0.490 Material categorization: RDS(on) () at VGS = 2.5 V 0.360 0.750for definitions of compliance please see

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IXFN55N50

 

 
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