SQ1902AEL Datasheet and Replacement
Type Designator: SQ1902AEL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.78 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 21 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.415 Ohm
Package: SOT-363
SQ1902AEL substitution
SQ1902AEL Datasheet (PDF)
sq1902ael.pdf
SQ1902AELwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 20 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.415 AEC-Q101 qualified cRDS(on) () at VGS = 2.5 V 0.600 Material categorization: ID (A) 0.78for definitions of compliance please see Configuration Dual
Datasheet: SPW55N80C3 , SQ1420EEH , SQ1421EEH , SQ1431EH , SQ1470AEH , SQ1470EH , SQ1539EH , SQ1563AEH , IRFB31N20D , SQ1912AEEH , SQ1912EEH , SQ2301ES , SQ2303ES , SQ2308BES , SQ2308CES , SQ2308ES , SQ2309ES .
History: SFF150 | STFI6N80K5
Keywords - SQ1902AEL MOSFET datasheet
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History: SFF150 | STFI6N80K5
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