SQ1902AEL Specs and Replacement
Type Designator: SQ1902AEL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.78 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 21 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.415 Ohm
Package: SOT-363
SQ1902AEL substitution
- MOSFET ⓘ Cross-Reference Search
SQ1902AEL datasheet
sq1902ael.pdf
SQ1902AEL www.vishay.com Vishay Siliconix Automotive Dual N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 20 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.415 AEC-Q101 qualified c RDS(on) ( ) at VGS = 2.5 V 0.600 Material categorization ID (A) 0.78 for definitions of compliance please see Configuration Dual... See More ⇒
Detailed specifications: SPW55N80C3, SQ1420EEH, SQ1421EEH, SQ1431EH, SQ1470AEH, SQ1470EH, SQ1539EH, SQ1563AEH, 8N60, SQ1912AEEH, SQ1912EEH, SQ2301ES, SQ2303ES, SQ2308BES, SQ2308CES, SQ2308ES, SQ2309ES
Keywords - SQ1902AEL MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IRFH5207PBF | 2SK897 | IRFH5020PBF | AM2336N | RAL035P01 | SQ1431EH | NVMFD5C650NL
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