SQ1912AEEH MOSFET. Datasheet pdf. Equivalent
Type Designator: SQ1912AEEH
Marking Code: 8R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 0.8 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 1 nC
trⓘ - Rise Time: 108 nS
Cossⓘ - Output Capacitance: 19 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: SOT-363
SQ1912AEEH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQ1912AEEH Datasheet (PDF)
sq1912aeeh.pdf
SQ1912AEEHwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 20 AEC-Q101 qualifiedRDS(on) () at VGS = 4.5 V 0.280 100 % Rg testedRDS(on) () at VGS = 2.5 V 0.360 Typical ESD protection: 800 VRDS(on) () at VGS = 1.8 V 0.450ID (A) 0.8 Material categorization: f
sq1912eeh.pdf
SQ1912EEHwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 20DefinitionRDS(on) () at VGS = 4.5 V 0.280 TrenchFET Power MOSFETRDS(on) () at VGS = 2.5 V 0.360 AEC-Q101 QualifieddRDS(on) () at VGS = 1.8 V 0.450 100 % Rg TestedID (A) 0.8 Ty
sq1912eh.pdf
SQ1912EHwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 20 V (D-S) 175 C MOSFETFEATURESSOT-363 TrenchFET power MOSFETSC-70 Dual (6 leads)S2 AEC-Q101 qualified4G2 100 % Rg tested5D1 Material categorization:6for definitions of compliance please see www.vishay.com/doc?999123D22G11S1 D1 D2Top ViewMarking Code: 9HPRODUC
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
