All MOSFET. SQ2303ES Datasheet

 

SQ2303ES MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQ2303ES
   Marking Code: 8C
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 4.5 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO-236

 SQ2303ES Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ2303ES Datasheet (PDF)

 ..1. Size:217K  vishay
 sq2303es.pdf

SQ2303ES SQ2303ES

SQ2303ESwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 30 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.170 AEC-Q101 QualifiedcRDS(on) () at VGS = - 4.5 V 0.370 100 % Rg and UIS TestedID (A) - 2.5 Compliant to RoHS Directive 2

 9.1. Size:224K  vishay
 sq2308bes.pdf

SQ2303ES SQ2303ES

SQ2308BESwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 60 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.170 AEC-Q101 QualifiedcRDS(on) () at VGS = 4.5 V 0.220 100 % Rg and UIS TestedID (A) 2.3 Compliant to RoHS Directive 2002/95/

 9.2. Size:108K  vishay
 sq2308es.pdf

SQ2303ES SQ2303ES

SQ2308ESVishay SiliconixAutomotiveN-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.155 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.205 Compliant to RoHS Directive 2002/95/ECID (A) 2.3 AEC-Q101 QualifiedcConfiguration Single Find out more a

 9.3. Size:261K  vishay
 sq2308ces.pdf

SQ2303ES SQ2303ES

SQ2308CESwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 AEC-Q101 Qualified cRDS(on) () at VGS = 10 V 0.150 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.164 Material categorization:ID (A) 2.3 For definitions of compliance please seewww.vishay.com/doc?99912 C

 9.4. Size:218K  vishay
 sq2309es.pdf

SQ2303ES SQ2303ES

SQ2309ESwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 60 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.335 AEC-Q101 QualifiedcRDS(on) () at VGS = - 4.5 V 0.500 100 % Rg and UIS TestedID (A) - 1.7 Compliant to RoHS Directive 2

 9.5. Size:216K  vishay
 sq2301es.pdf

SQ2303ES SQ2303ES

SQ2301ESwww.vishay.comVishay SiliconixAutomotive P-Channel 20 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 20 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.120 AEC-Q101 QualifieddRDS(on) () at VGS = - 2.5 V 0.180 100 % Rg and UIS TestedID (A) - 3.9 Compliant to RoHS Directive

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