IXFX34N80 Datasheet. Specs and Replacement

Type Designator: IXFX34N80  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 560 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 920 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: TO247

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IXFX34N80 substitution

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IXFX34N80 datasheet

 ..1. Size:48K  ixys
 ixfk34n80 ixfx34n80.pdf pdf_icon

IXFX34N80

HiPerFETTM IXFK 34N80 VDSS = 800 V IXFX 34N80 ID25 = 34 A Power MOSFETs RDS(on) = 0.24 W Single MOSFET Die trr 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 V (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C34 A TO-264 AA (I... See More ⇒

 9.1. Size:161K  ixys
 ixfk32n80p ixfx32n80p.pdf pdf_icon

IXFX34N80

IXFK 32N80P VDSS = 800 V PolarHVTM HiPerFET IXFX 32N80P ID25 = 32 A Power MOSFET RDS(on) 270 m N-Channel Enhancement Mode trr 250 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGSS Contin... See More ⇒

 9.2. Size:123K  ixys
 ixfk30n50q ixfx30n50q.pdf pdf_icon

IXFX34N80

VDSS ID25 RDS(on) HiPerFETTM IXFK/IXFX 30N50Q 500 V 30 A 0.16 Power MOSFETs IXFK/IXFX 32N50Q 500 V 32 A 0.15 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS... See More ⇒

 9.3. Size:573K  ixys
 ixfk32n50q ixfx32n50q.pdf pdf_icon

IXFX34N80

VDSS ID25 RDS(on) IXFK 32N50Q HiPerFETTM IXFX 32N50Q 500 V 32 A 0.16 Power MOSFETs 500 V 32 A 0.16 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M ... See More ⇒

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Detailed specifications: IXFX16N90, IXFX180N07, IXFX180N085, IXFX180N10, IXFX24N100, IXFX26N90, IXFX28N60, IXFX32N50Q, STP65NF06, IXFX44N60, IXFX48N50Q, IXFX50N50, IXFX55N50, IXFX90N20Q, IXFX90N30, IXTA1N100, IXTA2N80

Keywords - IXFX34N80 MOSFET specs

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