SQ2308BES MOSFET. Datasheet pdf. Equivalent
Type Designator: SQ2308BES
Marking Code: 8U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 2.3 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 4.5 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 23 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: TO-236
SQ2308BES Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQ2308BES Datasheet (PDF)
sq2308bes.pdf
SQ2308BESwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 60 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.170 AEC-Q101 QualifiedcRDS(on) () at VGS = 4.5 V 0.220 100 % Rg and UIS TestedID (A) 2.3 Compliant to RoHS Directive 2002/95/
sq2308es.pdf
SQ2308ESVishay SiliconixAutomotiveN-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.155 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.205 Compliant to RoHS Directive 2002/95/ECID (A) 2.3 AEC-Q101 QualifiedcConfiguration Single Find out more a
sq2308ces.pdf
SQ2308CESwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 AEC-Q101 Qualified cRDS(on) () at VGS = 10 V 0.150 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.164 Material categorization:ID (A) 2.3 For definitions of compliance please seewww.vishay.com/doc?99912 C
sq2303es.pdf
SQ2303ESwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 30 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.170 AEC-Q101 QualifiedcRDS(on) () at VGS = - 4.5 V 0.370 100 % Rg and UIS TestedID (A) - 2.5 Compliant to RoHS Directive 2
sq2309es.pdf
SQ2309ESwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 60 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.335 AEC-Q101 QualifiedcRDS(on) () at VGS = - 4.5 V 0.500 100 % Rg and UIS TestedID (A) - 1.7 Compliant to RoHS Directive 2
sq2301es.pdf
SQ2301ESwww.vishay.comVishay SiliconixAutomotive P-Channel 20 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 20 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.120 AEC-Q101 QualifieddRDS(on) () at VGS = - 2.5 V 0.180 100 % Rg and UIS TestedID (A) - 3.9 Compliant to RoHS Directive
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