All MOSFET. SQ2308BES Datasheet

 

SQ2308BES Datasheet and Replacement


   Type Designator: SQ2308BES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2.3 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO-236
      - MOSFET Cross-Reference Search

 

SQ2308BES Datasheet (PDF)

 ..1. Size:224K  vishay
sq2308bes.pdf pdf_icon

SQ2308BES

SQ2308BESwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 60 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.170 AEC-Q101 QualifiedcRDS(on) () at VGS = 4.5 V 0.220 100 % Rg and UIS TestedID (A) 2.3 Compliant to RoHS Directive 2002/95/

 8.1. Size:108K  vishay
sq2308es.pdf pdf_icon

SQ2308BES

SQ2308ESVishay SiliconixAutomotiveN-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.155 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.205 Compliant to RoHS Directive 2002/95/ECID (A) 2.3 AEC-Q101 QualifiedcConfiguration Single Find out more a

 8.2. Size:261K  vishay
sq2308ces.pdf pdf_icon

SQ2308BES

SQ2308CESwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 AEC-Q101 Qualified cRDS(on) () at VGS = 10 V 0.150 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.164 Material categorization:ID (A) 2.3 For definitions of compliance please seewww.vishay.com/doc?99912 C

 9.1. Size:217K  vishay
sq2303es.pdf pdf_icon

SQ2308BES

SQ2303ESwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 30 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.170 AEC-Q101 QualifiedcRDS(on) () at VGS = - 4.5 V 0.370 100 % Rg and UIS TestedID (A) - 2.5 Compliant to RoHS Directive 2

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPB22N03S4L-15 | 2SK3700 | LSC65R280HT

Keywords - SQ2308BES MOSFET datasheet

 SQ2308BES cross reference
 SQ2308BES equivalent finder
 SQ2308BES lookup
 SQ2308BES substitution
 SQ2308BES replacement

 

 
Back to Top

 


 
.