All MOSFET. SQ2310ES Datasheet

 

SQ2310ES MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQ2310ES
   Marking Code: 8T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 4.5 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO-236

 SQ2310ES Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ2310ES Datasheet (PDF)

 ..1. Size:219K  vishay
 sq2310es.pdf

SQ2310ES SQ2310ES

SQ2310ESwww.vishay.comVishay SiliconixAutomotive N-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 20DefinitionRDS(on) () at VGS = 4.5 V 0.030 TrenchFET Power MOSFETRDS(on) () at VGS = 2.5 V 0.034 AEC-Q101 QualifiedcRDS(on) () at VGS = 1.5 V 0.042 100 % Rg and UIS TestedID (A) 6 Co

 9.1. Size:219K  vishay
 sq2318es.pdf

SQ2310ES SQ2310ES

SQ2318ESwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.040 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.055 AEC-Q101 QualifiedcID (A) 6 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS

 9.2. Size:109K  vishay
 sq2319es.pdf

SQ2310ES SQ2310ES

SQ2319ESwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.075 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.145 AEC-Q101 QualifiedcID (A) - 4.6 100 % Rg and UIS TestedConfiguration Single Complia

 9.3. Size:255K  vishay
 sq2318aes.pdf

SQ2310ES SQ2310ES

SQ2318AESwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 AEC-Q101 QualifiedcRDS(on) () at VGS = 10 V 0.031 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.036 Material categorization:ID (A) 8For definitions of compliance please see Configuration Singleww

 9.4. Size:211K  vishay
 sq2315es.pdf

SQ2310ES SQ2310ES

SQ2315ESwww.vishay.comVishay SiliconixAutomotive P-Channel 12 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 12DefinitionRDS(on) () at VGS = - 4.5 V 0.050 TrenchFET Power MOSFETRDS(on) () at VGS = - 2.5 V 0.068 AEC-Q101 QualifiedcRDS(on) () at VGS = - 1.8 V 0.092 100 % Rg and UIS TestedID (A) -

 9.5. Size:218K  vishay
 sq2319ads.pdf

SQ2310ES SQ2310ES

SQ2319ADSwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 AEC-Q101 qualified cRDS(on) () at VGS = -10 V 0.075 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.145 Material categorization: ID (A) -4.6for definitions of compliance please see Configuration Singlewww.vis

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , SKD502T , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: BUK6607-75C

 

 
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