SQ2362ES Specs and Replacement

Type Designator: SQ2362ES

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm

Package: TO-236

SQ2362ES substitution

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SQ2362ES datasheet

 ..1. Size:251K  vishay
sq2362es.pdf pdf_icon

SQ2362ES

SQ2362ES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 AEC-Q101 qualified RDS(on) ( ) at VGS = 10 V 0.068 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.075 Material categorization ID (A) 4.3 for definitions of compliance please see Configuration Single www.vis... See More ⇒

 9.1. Size:255K  vishay
sq2361aees.pdf pdf_icon

SQ2362ES

SQ2361AEES www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -60 Typical ESD protection 800 V RDS(on) ( ) at VGS = -10 V 0.170 AEC-Q101 qualified RDS(on) ( ) at VGS = -4.5 V 0.230 100 % Rg and UIS tested ID (A) -2.9 Material categorization Configuration Single for ... See More ⇒

 9.2. Size:254K  vishay
sq2361es.pdf pdf_icon

SQ2362ES

SQ2361ES www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -60 AEC-Q101 qualified RDS(on) ( ) at VGS = -10 V 0.177 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.246 Material categorization ID (A) -2.8 for definitions of compliance please see Configuration Single... See More ⇒

 9.3. Size:220K  vishay
sq2360ees.pdf pdf_icon

SQ2362ES

SQ2360EES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.085 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.130 AEC-Q101 Qualifiedc ID (A) 4.4 100 % Rg and UIS Tested Configuration Single Typical ESD Pr... See More ⇒

Detailed specifications: SQ2325ES, SQ2328ES, SQ2337ES, SQ2348ES, SQ2351ES, SQ2360EES, SQ2361EES, SQ2361ES, IRFP064N, SQ2389ES, SQ2398ES, SQ3410EV, SQ3418EEV, SQ3418EV, SQ3419EEV, SQ3426EEV, SQ3426EV

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