All MOSFET. SQ2389ES Datasheet

 

SQ2389ES Datasheet and Replacement


   Type Designator: SQ2389ES
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.1 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.094 Ohm
   Package: TO-236
 

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SQ2389ES Datasheet (PDF)

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SQ2389ES

SQ2389ESwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 AEC-Q101 qualifiedRDS(on) () at VGS = -10 V 0.094 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.188 Material categorization:ID (A) -4.1for definitions of compliance please seeConfiguration Single www.v

Datasheet: SQ2328ES , SQ2337ES , SQ2348ES , SQ2351ES , SQ2360EES , SQ2361EES , SQ2361ES , SQ2362ES , IRFP064N , SQ2398ES , SQ3410EV , SQ3418EEV , SQ3418EV , SQ3419EEV , SQ3426EEV , SQ3426EV , SQ3427EEV .

History: SM6008NF | 2SK1813

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