SQ2389ES Specs and Replacement

Type Designator: SQ2389ES

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.094 Ohm

Package: TO-236

SQ2389ES substitution

- MOSFET ⓘ Cross-Reference Search

 

SQ2389ES datasheet

 ..1. Size:250K  vishay
 sq2389es.pdf pdf_icon

SQ2389ES

SQ2389ES www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 AEC-Q101 qualified RDS(on) ( ) at VGS = -10 V 0.094 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.188 Material categorization ID (A) -4.1 for definitions of compliance please see Configuration Single www.v... See More ⇒

Detailed specifications: SQ2328ES, SQ2337ES, SQ2348ES, SQ2351ES, SQ2360EES, SQ2361EES, SQ2361ES, SQ2362ES, AO4468, SQ2398ES, SQ3410EV, SQ3418EEV, SQ3418EV, SQ3419EEV, SQ3426EEV, SQ3426EV, SQ3427EEV

Keywords - SQ2389ES MOSFET specs

 SQ2389ES cross reference

 SQ2389ES equivalent finder

 SQ2389ES pdf lookup

 SQ2389ES substitution

 SQ2389ES replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility