All MOSFET. SQ2389ES Datasheet

 

SQ2389ES MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQ2389ES
   Marking Code: 9A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 4.1 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 8.2 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.094 Ohm
   Package: TO-236

 SQ2389ES Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ2389ES Datasheet (PDF)

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 sq2389es.pdf

SQ2389ES SQ2389ES

SQ2389ESwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 AEC-Q101 qualifiedRDS(on) () at VGS = -10 V 0.094 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.188 Material categorization:ID (A) -4.1for definitions of compliance please seeConfiguration Single www.v

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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