All MOSFET. SQ2389ES Datasheet

 

SQ2389ES MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQ2389ES
   Marking Code: 9A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 4.1 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 8.2 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.094 Ohm
   Package: TO-236

 SQ2389ES Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ2389ES Datasheet (PDF)

 ..1. Size:250K  vishay
 sq2389es.pdf

SQ2389ES SQ2389ES

SQ2389ESwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 AEC-Q101 qualifiedRDS(on) () at VGS = -10 V 0.094 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.188 Material categorization:ID (A) -4.1for definitions of compliance please seeConfiguration Single www.v

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SI2301B | WMP08N70EM | HM1404

 

 
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