All MOSFET. SQ2398ES Datasheet

 

SQ2398ES MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQ2398ES
   Marking Code: 9E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 2 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
   Maximum Drain Current |Id|: 1.6 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 2.3 nC
   Rise Time (tr): 18 nS
   Drain-Source Capacitance (Cd): 28 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm
   Package: TO-236

 SQ2398ES Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ2398ES Datasheet (PDF)

 ..1. Size:255K  vishay
 sq2398es.pdf

SQ2398ES SQ2398ES

SQ2398ESwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 100 AEC-Q101 qualified cRDS(on) () at VGS = 10 V 0.300 100 % Rg and UIS testedID (A) 1.67 Material categorization: Configuration Singlefor definitions of compliance please see Package SOT-23www.vishay.com/d

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