All MOSFET. SQ2398ES Datasheet

 

SQ2398ES Datasheet and Replacement


   Type Designator: SQ2398ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.6 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-236
 

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SQ2398ES Datasheet (PDF)

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SQ2398ES

SQ2398ESwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 100 AEC-Q101 qualified cRDS(on) () at VGS = 10 V 0.300 100 % Rg and UIS testedID (A) 1.67 Material categorization: Configuration Singlefor definitions of compliance please see Package SOT-23www.vishay.com/d

Datasheet: SQ2337ES , SQ2348ES , SQ2351ES , SQ2360EES , SQ2361EES , SQ2361ES , SQ2362ES , SQ2389ES , IRF730 , SQ3410EV , SQ3418EEV , SQ3418EV , SQ3419EEV , SQ3426EEV , SQ3426EV , SQ3427EEV , SQ3427EV .

History: RFM12N20

Keywords - SQ2398ES MOSFET datasheet

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