SQ2398ES Specs and Replacement

Type Designator: SQ2398ES

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-236

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SQ2398ES datasheet

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SQ2398ES

SQ2398ES www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 100 AEC-Q101 qualified c RDS(on) ( ) at VGS = 10 V 0.300 100 % Rg and UIS tested ID (A) 1.67 Material categorization Configuration Single for definitions of compliance please see Package SOT-23 www.vishay.com/d... See More ⇒

Detailed specifications: SQ2337ES, SQ2348ES, SQ2351ES, SQ2360EES, SQ2361EES, SQ2361ES, SQ2362ES, SQ2389ES, IRF730, SQ3410EV, SQ3418EEV, SQ3418EV, SQ3419EEV, SQ3426EEV, SQ3426EV, SQ3427EEV, SQ3427EV

Keywords - SQ2398ES MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.