SQ3418EV MOSFET Datasheet: N-Ch, 40V, 8A. Full specification with pinout and replacement list

SQ3418EV Specs and Replacement

Type Designator: SQ3418EV

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 81 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TSOP-6

SQ3418EV substitution

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SQ3418EV datasheet

..1. Size:239K vishay
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SQ3418EV www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 40 AEC-Q101 qualified d RDS(on) ( ) at VGS = 10 V 0.032 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.042 Material categorization ID (A) 8 for definitions of compliance please see Configuration Single www.vi... See More ⇒

7.1. Size:210K vishay
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SQ3418EEV www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.032 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.048 Typical ESD Protection 800 V ID (A) 8 AEC-Q101 Qualifiedd Configuration Single 100 % Rg an... See More ⇒

8.1. Size:84K vishay
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Work-In-Progress SQ3418AEEV www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 40 Typical ESD protection 800 V RDS(on) ( ) at VGS = 10 V 0.032 AEC-Q101 qualifiedd RDS(on) ( ) at VGS = 4.5 V 0.042 100 % Rg and UIS tested ID (A) 8 Material categorization Configuration Singl... See More ⇒

9.1. Size:209K vishay
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SQ3419EEV www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) - 40 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 10 V 0.050 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = - 4.5 V 0.078 100 % Rg and UIS Tested ID (A) - 7.4 Typical ESD Protection 800 V... See More ⇒